Optical device

An optical device and visible light technology, which is applied in the field of infrared optics, can solve the problems of difficult to achieve controllable adjustment of white light power, difficult to perfectly present visual effects, etc., and achieve excellent reliability, strong anti-interference ability, and good application prospects.

Active Publication Date: 2020-01-07
GRIREM ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the main problems of this implementation method are: the power of near-infrared luminous light still needs to be further improved, and it is difficult to achieve controllable adjustment of the light power of white light, and it is difficult to perfectly present a soft visual effect

Method used

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Embodiment 1

[0056] An optical device, the components of which are blue LED chips with a wavelength of 440nm and a molecular formula of Ca 0.1 Sr 0.89 AlSiN 3 :0.01Eu 2+ Visible light luminescent material, the molecular formula is Y 2 o 3 1.6Ga 2 o 3 0.06Cr 2 o 3 The near-infrared luminescent material; wherein the near-infrared luminescent material accounts for 99% of the total mass of the luminescent material, and the D50 particle size of the near-infrared luminescent material is 26 μm; the D50 particle size of the visible light luminescent material is 15 μm. Mix the visible light luminescent material and silica gel evenly in the present invention, stir and defoam to obtain the visible light fluorescence conversion layer mixture, and cover the mixture on the surface of the LED chip layer by coating, wherein the visible light luminescent material is on the light emitting surface of the LED chip The coating mass in the vertical direction accounts for 20% of the total mass of the vis...

Embodiment 4

[0059] An optical device, the components of which are blue LED chips with a wavelength of 460nm and a molecular formula of Ca 0.49 Sr 0.49 AlSiN 3 :0.02Eu 2+ Visible light luminescent material, the molecular formula is Y 2 o 3 1.8Ga 2 o 3 0.06Cr 2 o 3 The near-infrared luminescent material; wherein the near-infrared luminescent material accounts for 93.6% of the total mass of the luminescent material, and the D50 particle size of the near-infrared luminescent material is 24 μm; the D50 particle size of the visible light luminescent material is 12 μm. Mix the visible light luminescent material and silica gel evenly in the present invention, stir and defoam to obtain the visible light fluorescence conversion layer mixture, and cover the mixture on the surface of the LED chip layer by dispensing, wherein the visible light luminescent material is on the light emitting surface of the LED chip The coating mass in the vertical direction accounts for 10% of the total mass of t...

Embodiment 7

[0062] An optical device, the components of which are blue LED chips with a wavelength of 420nm and a molecular formula of Ca 0.1 Sr 0.89 AlSiN 3 :0.01Eu 2+ Visible light luminescent material, the molecular formula is (Y 0.5 Lu 0.5 ) 2o 3 1.6Ga 2 o 3 0.06Cr 2 o 3 The near-infrared luminescent material; wherein the near-infrared luminescent material accounts for 99.99% of the total mass of the luminescent material, and the D50 particle size of the near-infrared luminescent material is 25 μm; the D50 particle size of the visible light luminescent material is 15 μm. Mix the visible light luminescent material and silica gel evenly in the present invention, stir and defoam to obtain the visible light fluorescence conversion layer mixture, and cover the mixture on the surface of the LED chip layer by dispensing, wherein the visible light luminescent material is on the light emitting surface of the LED chip The coating mass in the vertical direction accounts for 10% of the ...

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Abstract

The invention relates to an optical device. The optical device comprises an LED chip, a visible light emitting material and a near-infrared light emitting material; the power of 650-1000nm waveband light emitted by the near-infrared light emitting material and the visible light emitting material under the excitation of the LED chip is A; the sum of the power of 350-650nm waveband light emitted bythe near-infrared light emitting material and the visible light emitting material under the excitation of the LED chip and the power of the residual emission light of the LED chip in wave bands of 350-650 nm after the chip excites the near-infrared light emitting material and the visible light emitting material is B; and B/A*100% is 0.1%-10%. According to the optical device, the LED chip is adopted, and at the same time, the near-infrared light-emitting material and the visible light emitting material are compounded, so that near-infrared light emitting and visible light emitting are achievedat the same time through the same kind of LED chip, and therefore, strong near-infrared light and weak visible light can be obtained. The packaging process of the device is greatly simplified; the packaging cost of the device is reduced; and the device has high emitting efficiency and high reliability, and can avoid red light explosion. The controllable adjustment of the power of light, especiallythe power of white light can be achieved; and a soft visual effect is achieved.

Description

technical field [0001] The invention relates to the technical field of infrared optics, in particular to optical devices of LED chips, visible light luminescent materials and near-infrared luminescent materials. Background technique [0002] In recent years, the application of near-infrared light in the fields of security monitoring, biometrics, 3D sensing, and food / medical testing has become a focus at home and abroad. Among them, near-infrared LED has become an international research hotspot because of its good directivity, low power consumption and small size. At present, the main implementation method of near-infrared LED is to use near-infrared semiconductor chips. For example, in the field of security, infrared chips with 730nm, 750nm, 850nm and 940nm bands are mainly used, especially short-wave infrared chips will produce very serious redness during use. Usually, one or more white LEDs are installed externally to compensate the light in the dark detection process and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50
CPCH01L33/504H01L2933/0041
Inventor 刘荣辉刘元红陈晓霞薛原马小乐
Owner GRIREM ADVANCED MATERIALS CO LTD
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