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Pixel unit of voltage domain global exposure image sensor and control method thereof

An image sensor and global exposure technology, applied in the direction of electrical components, image communication, color TV components, etc., can solve the problems of low full well capacity, poor PLS performance, large pixel size, etc., to improve image quality and improve performance effect

Pending Publication Date: 2020-01-10
南京威派视半导体技术有限公司 +1
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problems of complex structure, large pixel size, low full well capacity and poor PLS (Parasitic Light Sensitivity) performance of the existing CMOS global exposure image sensor, the present invention provides a pixel unit of the voltage domain global exposure image sensor

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  • Pixel unit of voltage domain global exposure image sensor and control method thereof
  • Pixel unit of voltage domain global exposure image sensor and control method thereof
  • Pixel unit of voltage domain global exposure image sensor and control method thereof

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Embodiment Construction

[0028] In order to achieve global exposure, the present invention proposes a pixel unit of a voltage-domain global exposure image sensor without signal charge transfer, which can effectively improve the PLS (Parasitic LightSensitivity) performance of the pixel unit. The following describes the present invention in conjunction with the accompanying drawings The specific embodiment is described in detail.

[0029] The present invention is a pixel unit of a voltage-domain global exposure image sensor, and its circuit structure refers to figure 1 , the pixel unit includes: a photoelectric conversion unit 1 , a sampling unit 2 , a reset unit 3 and a reading unit 4 . In an array composed of multiple pixel units, the control gates of the photoelectric conversion units are connected to each other to form a word line WL, the gates of the sampling transistors are connected to each other to form a sampling signal control line SW, and the gates of the reset transistors are connected to ea...

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Abstract

The invention provides a pixel unit of a voltage domain global exposure image sensor and a control method thereof. Each pixel unit comprises a photoelectric conversion unit, a sampling unit, a reset unit and a reading unit, the photoelectric conversion unit comprises a floating gate photosensitive transistor and a first source electrode following transistor, the sampling unit comprises a samplingtransistor, the reset unit comprises a reset transistor, the reading unit comprises a second source electrode following transistor and a reading selection transistor, and a floating diffusion node isformed by a source electrode of the sampling transistor and a node connected with a drain electrode of the reset transistor. According to the invention, the floating diffusion node is used as a sampling signal storage node and is isolated from a photocharge accumulation region, and a global exposure function can be realized without photocharge transfer, so that the PLS performance of the pixel unit is improved, and finally, the image quality is improved.

Description

technical field [0001] The invention relates to the technical field of CMOS image sensors, in particular to a pixel unit of a global exposure image sensor and a control method thereof. Background technique [0002] Image sensors are an important part of digital photography equipment, and can be classified into CCD (Charge Coupled Device) and CMOS (Complementary Metal-Oxide Semiconductor) image sensors according to different devices. Because CMOS image sensors have many advantages such as easy integration, low power consumption, and low cost, they have been widely used in various fields. [0003] CMOS image sensors can be divided into progressive exposure image sensors and global exposure image sensors according to different exposure methods. A pixel unit usually includes a photoelectric conversion unit and multiple transistors. In order to realize the global exposure function, U.S. Patent Publication No. US6566697 discloses a 5T global exposure image sensor; U.S. Patent Pub...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/359H04N5/361H04N5/378H04N5/355H04N5/374
CPCH04N25/57H04N25/62H04N25/63H04N25/76H04N25/75
Inventor 马浩文
Owner 南京威派视半导体技术有限公司