Wafer warpage adjustment method and equipment

Abstract

The invention provides a wafer warpage adjustment method and equipment. The wafer warpage adjustment method comprises the following steps: providing a wafer having a first surface and a second surfacewhich are oppositely arranged;depositing a thin film on the first surface or the second surface of the wafer; and dividing the thin filminto a treatment area and a non-treatment area and performing warpage adjustment treatment on the treatment area. The warpage degree adjustment treatment is performed on a part of areas of the thin film after the thin film is deposited so that the anisotropic warpage presented by the wafer is adjusted and the surface of the wafer keeps flat and thus the process stability of the manufacturing process and the product yield can be ensured.

Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer warpage adjustment method and equipment. Background technique

[0002] In the manufacturing process of semiconductor wafers, wafer warpage is a key parameter affecting process stability and product yield. Wafers will warp to varying degrees after undergoing different processes such as etching or thin film deposition. In the current mainstream semiconductor process, the warpage of the wafer is generally monitored after the process site of interest, and the warpage of the wafer is adjusted at the subsequent specific process site to keep the wafer surface flat.

[0003] At present, in the process station capable of adjusting the warpage of the wafer, the stress generated by the thin film deposition process through the deposited film can uniformly and controllably adjust the warpage in the entire wafer plane. For example, when the wafer is warped in a bo...

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