Wafer warpage adjustment method and equipment

An adjustment method and technology for adjusting equipment, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem that thin film deposition cannot fully adjust the anisotropic warpage of the wafer surface, and ensure process stability and product quality. Yield effect

Inactive Publication Date: 2020-01-14
YANGTZE MEMORY TECH CO LTD
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method and equipment for adjusting wafer warpage to solve the problem in the prior art that film deposition cannot fully adjust the in-plane anisotropic warpage of the wafer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer warpage adjustment method and equipment
  • Wafer warpage adjustment method and equipment
  • Wafer warpage adjustment method and equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] see Figure 1 to Figure 9 , the present embodiment provides a method for adjusting wafer warpage, characterized in that it includes the following steps:

[0072] 1) providing a wafer, the wafer has a first surface and a second surface oppositely arranged;

[0073] 2) depositing a thin film on the first surface or the second surface of the wafer;

[0074] 3) Dividing the film into a treated area and a non-treated area, and performing warpage adjustment treatment on the treated area.

[0075] In step 1), see figure 1 S1 and figure 2 , providing a wafer 100, the wafer 100 has a first surface 100a and a second surface 100b disposed opposite to each other.

[0076] Such as figure 2 As shown, the wafer 100 is normal without warpage. Once the wafer is warped, it may affect the alignment of the patterning process, and even cause fragmentation due to stress. Therefore, in the manufacturing process of semiconductor wafers, it is generally expected to obtain figure 2 Th...

Embodiment 2

[0091] see Figure 10 to Figure 11 , this embodiment provides a wafer warpage adjustment device, characterized in that: comprising:

[0092] A thin film growth module is used to deposit a thin film on the surface of a wafer, the wafer has a first surface and a second surface oppositely arranged, and the thin film growth module is on the first surface or the second surface of the wafer deposition of thin films on the surface;

[0093] The warpage adjustment processing module is used to divide the film into a treatment area and a non-treatment area, and perform warpage adjustment processing on the treatment area.

[0094] Such as Figure 10Shown is a schematic diagram of the thin film growth module 300 provided in this embodiment. The wafer 301 is accommodated in a closed chamber 302 and held by a wafer holding device 303 . The direction in which the silicon nitride film 304 needs to be grown on the back side of the wafer 301 is provided with a plasma generator 305, which ge...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a wafer warpage adjustment method and equipment. The wafer warpage adjustment method comprises the following steps: providing a wafer having a first surface and a second surfacewhich are oppositely arranged;depositing a thin film on the first surface or the second surface of the wafer; and dividing the thin filminto a treatment area and a non-treatment area and performing warpage adjustment treatment on the treatment area. The warpage degree adjustment treatment is performed on a part of areas of the thin film after the thin film is deposited so that the anisotropic warpage presented by the wafer is adjusted and the surface of the wafer keeps flat and thus the process stability of the manufacturing process and the product yield can be ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer warpage adjustment method and equipment. Background technique [0002] In the manufacturing process of semiconductor wafers, wafer warpage is a key parameter affecting process stability and product yield. Wafers will warp to varying degrees after undergoing different processes such as etching or thin film deposition. In the current mainstream semiconductor process, the warpage of the wafer is generally monitored after the process site of interest, and the warpage of the wafer is adjusted at the subsequent specific process site to keep the wafer surface flat. [0003] At present, in the process station capable of adjusting the warpage of the wafer, the stress generated by the thin film deposition process through the deposited film can uniformly and controllably adjust the warpage in the entire wafer plane. For example, when the wafer is warped in a bo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3105H01L21/3115H01L21/67
CPCH01L21/3105H01L21/31155H01L21/67213
Inventor 徐文浩宋月陈松超张高升
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap