OLED display panel and manufacturing method thereof, OLED display device
A technology for a display panel and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, electrical components, etc., can solve the problems of poor lateral oxygen resistance of cathode and anode, edge failure of light-emitting devices, low process temperature, etc. The effect of improving the resistance to water and oxygen corrosion, improving the lateral water and oxygen resistance, and simple process
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Embodiment 1
[0041] Such as figure 1 As shown, the OLED display panel provided by the embodiment of the present invention includes a base substrate 10, a thin film transistor array layer 20, a flat layer 30, a light emitting device layer 80 and a thin film encapsulation layer.
[0042] Wherein, the base substrate 10 is a flexible substrate, and its material can be polyimide (PolyimideFilm, PI); the thin film transistor array layer 20 is arranged on the upper surface of the base substrate 10, and the thin film transistor array layer The material of 20 may be low temperature polysilicon (Low Temperature Poly-silicon, LTPS); the flat layer 30 is arranged on the upper surface of the thin film transistor array layer 20; the light emitting device layer 80 is arranged on the upper surface of the flat layer 30 and Located in the middle of the upper surface of the planar layer 30, the light emitting device layer 80 is located in the pixel hole 90. It should be noted that the thin film transistor ar...
Embodiment 2
[0051] Such as figure 2 As shown, the manufacturing method of the OLED display panel provided by the embodiment of the present invention includes the following steps:
[0052] Step S10 : providing a base substrate 10 on which a thin film transistor array layer 20 is formed.
[0053] Specifically, such as Figure 3A As shown, the base substrate 10 is a flexible substrate; the material of the thin film transistor array layer 20 is LTPS.
[0054] Step S20 : forming a flat layer 30 on the thin film transistor array layer 20 .
[0055] Specifically, such as Figure 3B As shown, the material of the flat layer 30 can be silicon nitride.
[0056] Step S30 : forming a first thin film encapsulation layer 40 on the planar layer 30 .
[0057] Specifically, such as Figure 3C As shown, in order to improve the encapsulation effect of the first thin film encapsulation layer 40, the step S30 may specifically include the following steps:
[0058] Step S301: controlling the temperatur...
Embodiment 3
[0074] An embodiment of the present invention also provides an OLED display device, including the OLED display panel in Embodiment 1. The OLED display device can be any product or component with a display function such as a mobile phone, a tablet computer, a television, a digital camera, etc. At the same time, the OLED display device has the technical effects of the OLED display panel in the first embodiment, which will not be repeated here.
[0075] The beneficial effects are: the OLED display panel and its manufacturing method and the OLED display device provided by the embodiment of the present invention, the first thin film encapsulation layer group covering the side of the light-emitting device layer is prepared through a high-temperature thin film encapsulation process to replace the pixel definition layer structure, increasing The lateral encapsulation capability of the OLED display panel improves the horizontal waterproof and oxygen performance of the cathode and anode,...
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