AI technical title is built by Patsnap AI team. It summarizes the technical point description of the patent document.
A diamond and tray technology, applied in the field of diamond growth trays and systems, can solve problems such as high local plasma density, and achieve the effects of low product stress, long growth time, and reduced quantity
Active Publication Date: 2021-10-01
CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
View PDF10 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
This substrate table design method can effectively suppress the growth of polycrystalline diamond seed crystals at the four sides / corners by avoiding edge discharge and corner discharge, resulting in excessive local plasma density, but the defect of this design is still that it needs multiple times Dealing with impurities grown on the surface of the seed tray
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0035] Please focus on figure 1 , the present invention provides a diamond growth tray, comprising a base 11 and a platform 12 mounted on the base 11;
[0036] The platform 12 is in the shape of a regular polygonal prism or a truncated cone, and has a groove 13 on the upper surface, and the edge of the opening of the groove 13 is designed to be chamfered.
[0037] Specifically, during the diamond growth process, the seed crystal is placed inside the groove 13, and the height of the upper surface of the seed crystal is 1-2mm lower than the edge of the concave edge; the diameter of the groove 13 is based on the synthetic single crystal The effective growth area is determined, and the diameter is less than or equal to 155mm; before use, the bottom of the groove 13 is first placed with auxiliary heat dissipation materials, such as filaments, sheets, etc., and the filament sheets are high temperature resistant (that is, can withstand over 1400°C) material, such as molybdenum, nick...
Embodiment 2
[0047] Please focus on figure 2 , the present invention also provides a diamond growth system, including the tray 1, and also includes a water cooling table 2, a tray lifting device 3, a detection device 5, and a control center 4;
[0048] The tray 1 is fixed on the water cooling table 2;
[0049] The water cooling platform 2 is installed on the tray lifting device 3;
[0050] The pallet lifting device 3 is used to control the up and down movement of the pallet 1; specifically, the pallet lifting device 3 includes a pulse motor and a lifting rail, and the water cooling table 2 is installed on the lifting rail to ensure that each time The lifting height is controlled between 0.1-1mm;
[0051] The detection device 5 is used to detect the thickness of the diamond in real time during the diamond growth process, and transmit the thickness data to the control center 4; the detection device 5 is a proximity position sensor;
[0052] The control center 4 is used to control the ope...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
diameter
aaaaa
aaaaa
diameter
aaaaa
aaaaa
Login to View More
Abstract
The invention relates to the field of diamond manufacturing, in particular to a diamond growth tray and system. A diamond growth tray, comprising a base and a platform mounted on the base; the platform is in the shape of a regular polygonal prism or a circular truncated shape, and has a groove on the upper surface, and the edge of the opening of the groove is inverted corner design. Compared with the existing technology, it has the following effects: through the newly designed seed crystal tray, the plasma distribution and electric field distribution on the surface of the seed crystal can be maintained in the best state, ensuring a stable growth environment for the diamond seed crystal, reducing the number of surface growth defects, Finally, a high-quality single crystal diamond sheet is synthesized; through the newly designed seed tray, the growth rate of impurities such as carbon black on the edge of the seed tray can be significantly reduced, ensuring a longer stable growth time for a single time, and thicker diamonds can be grown at one time products and improve production efficiency.
Description
technical field [0001] The invention relates to the field of diamond manufacturing, in particular to a diamond growth tray and system. Background technique [0002] High-quality diamond has a high band gap and a wide light transmission spectrum. At the same time, it has ultra-high hardness and thermal conductivity, excellent insulation, and excellent physical and chemical properties such as acid resistance, heat resistance, and radiation resistance. It can be used in precision machining. , Optical windows, gemstones, MEMS (Micro-Electro-Mechanical System, Micro-Electro-Mechanical System), chips and other fields. However, high-quality natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure method, hot wire chemical vapor deposition method. Among them, the MPCVD (Microwave plasma chemical vapor deposition, microwave plasma chemical vapor deposition method) synthetic diamond method can th...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More
Patent Type & AuthorityPatents(China)
IPC IPC(8): C30B29/04C30B25/12
CPCC30B25/12C30B29/04
Inventor彭国令黄翀
OwnerCHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
Login to View More