A High Efficiency SMD Transistor with Good Heat Dissipation Structure

Abstract

The invention discloses a high-efficiency patch triode with a good heat dissipation structure, relates to the technical field of patch triodes, and includes a packaging shell, a wear-resistant and crack-proof component and a heat dissipation component. Pins are installed under the package shell. And the outer side of the connection between the pin and the package shell is fixed with a sealing and waterproof component, the wear-resistant and crack-proof component is fixed on the outside of the package shell, the upper part of the package shell is integrally connected with a fixing plate, and the fixing plate A threaded hole is provided in the middle, a main chip is installed in the middle of the package shell, and a reinforced protective component is installed on the outside of the main chip, a conductive layer is welded at the connection between the main chip and the pin, and the upper and lower sides of the main chip Insulation is fixed on both sides. The beneficial effect of the present invention is that: the device facilitates the prevention of moisture aging at the connection position between the pin and the package shell through the arrangement of the sealed waterproof component, and facilitates the efficient heat dissipation of the chip transistor through the arrangement of the heat dissipation component.

Description

technical field [0001] The invention relates to the technical field of patch triodes, in particular to a high-efficiency patch triode with a good heat dissipation structure. Background technique [0002] SMD triode belongs to an electronic component. The basic function of SMD triode is to amplify. It can amplify weak electrical signals to a certain intensity. An important parameter of the triode is the current amplification factor β. When a small current is applied to the base of the triode, a current that is β times the injected current can be obtained on the collector, that is, the collector current. And a small change in the base current can cause a large change in the collector current, which is the amplification effect of the SMD transistor. [0003] The existing patch triode has a relatively simple structure, does not have a good heat dissipation structure, and is easily damaged by high temperature inside, so it needs to be replaced frequently, which increases the co...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a high-efficiency patch triode with a good heat dissipation structure to solve the problem that the existing patch triode proposed in the above background technology has a relatively simple structure, does not have a good heat dissipation structure, and is easily damaged by high temperature inside. Therefore, it needs to be replaced frequently, which increases the cost of use, and the connection between the pin and the package shell is prone to moisture, which leads to erosion and aging, which affects the service life, and the structural strength and wear resistance are poor, and it is easy to be damaged or cracked.

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