Surface passivation method of semiconductor material

Abstract

The invention provides a surface passivation method of a semiconductor material, and relates to the technical field of material science and technology. The surface passivation method of the semiconductor material comprises the following steps: S1. preparing a HCl solution and soaking the semiconductor material in the HCl solution for 15-30min, then taking out the semiconductor material and cleaning its surface with distilled water and sending the semiconductor material into a vacuum environment for drying treatment after cleaning; and S2. placing the semiconductor material in a high-temperature furnace and adjusting the temperature in the high-temperature furnace to the range of 1000-1200 DEG C to form a thermal oxide film on the surface of the semiconductor material and then cooling the semiconductor material by nitrogen. The formed thermal oxide film is removed and then a silicon dioxide passivation layer is formed at a low temperature so that the silicon dioxide passivation layer can be better attached to the surface of the semiconductor material. Meanwhile, the influence of Na ions on the semiconductor material is further removed through the treatment of the HCl solution and the HF solution so that the passivation effect of the semiconductor material is greatly improved.

Description

technical field [0001] The invention relates to the technical field of material science, in particular to a surface passivation method for semiconductor materials. Background technique [0002] In an integrated circuit, many devices need to be assembled on a single crystal substrate, and these devices need to be connected to each other, and with the improvement of integration and the reduction of feature size, the wiring density must increase, so it is used between devices As well as the insulating passivation film for electrical isolation between wirings is very important. In addition, due to the difference between the surface and internal structure of the semiconductor (the surface lattice atoms are terminated and there are dangling bonds, that is, unsaturated bonds), the properties of the surface and the interior are different, and the surface condition plays an important role in the performance of the device. As long as there is a small amount of contamination on the su...

AI Technical Summary

Problems solved by technology

[0003] The surface of traditional semiconductor materials generally only forms a layer of silicon dioxide thermal oxide film, which can indeed have good corrosion resistance in a short period of time, but over a long period of time, the passivation layer on the surface of semiconductor materials will still be affected to a certain extent. In order to solve this problem, the surface of the semiconductor material was passivated with multiple layers to achieve the effect of improving corrosion resistance, but the purification process still needs to be further improved