Semiconductor power element and manufacturing method thereof

Abstract

The invention discloses a semiconductor power element and a manufacturing method thereof. The manufacturing method of the semiconductor power element comprises the steps that a semiconductor layer isformed on a substrate; at least a base region and a source region in the base region are formed in the semiconductor layer, and a channel is defined between the edge of the source region and the edgeof the base region; a gate stack structure is formed on the semiconductor layer and overlaps the channel region in a vertical direction; at least a spaced portion is formed to cover the sidewall surface of the gate stack structure; the spaced portion covers a portion of the source region, and the other part of the source region is exposed on the upper surface; the spaced portion and the gate stackstructure are used as a shield, and a self-aligned silicidation process is performed to form a silicide layer contacting the source region; and an interconnection circuit structure is formed on thesemiconductor layer. The interconnection circuit structure includes at least an interlayer dielectric layer and a source conductive layer electrically connected with the source region. The silicide layer extends from a space below the source conductive layer toward the gate stack structure to a space below the interlayer dielectric layer.

Description

technical field [0001] The invention relates to a semiconductor power element and a manufacturing method thereof, in particular to a vertical double-diffused metal oxide semiconductor field effect transistor and a manufacturing method thereof. Background technique [0002] For existing semiconductor power devices (such as: Horizontal Double-diffused MOSFET (LDMOSFET) and Vertical Double-diffused MOSFET (VDMOSFET)), the breakdown voltage (breakdown voltage) and conduction On-resistance is a more important parameter, wherein the on-resistance will affect the conduction loss (conducting loss, conduction loss) of the semiconductor power element. [0003] Taking the vertical double-diffused transistor as an example, the on-resistance is generally reduced by increasing the carrier concentration in the drift region of the semiconductor power device. However, increasing the carrier concentration in the drift region may lead to a decrease in the breakdown voltage of semiconductor po...

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Problems solved by technology

However, increasing the carrier concentration in the drift region may lead to a decrease in the breakdown voltage of semiconductor power devices

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