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Filter and preparation method thereof

A filter and bulk acoustic wave resonator technology, applied in electrical components, impedance networks, etc., can solve the problems of many process steps, high production cost, long production process, etc., and achieve simplified process, light weight, and small thickness. Effect

Pending Publication Date: 2020-01-31
深圳市汇芯通信技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The preparation method of the prior art has many process steps and a long production process, resulting in high production costs, and in this preparation method, because two wafers are bonded together, the device is thick and heavy

Method used

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  • Filter and preparation method thereof
  • Filter and preparation method thereof
  • Filter and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1 provides a kind of BAW filter, refer to figure 1 , figure 1 The BAW filter structure is shown, including: a substrate 100 , bulk acoustic wave resonators ( 210 , 220 , 230 ), an electrical connection layer 300 , a sealing layer 400 , a capping layer 500 and a protective layer 600 .

[0032] In this embodiment, the substrate 100 can be made of material Si or SiC, the substrate has a lower cavity 110, the lower cavity 110 is arranged on the upper surface of the substrate, and a bulk acoustic wave resonator (210) is arranged on the lower cavity. , 220 , 230 ), the bulk acoustic wave resonator includes a lower electrode 210 , a piezoelectric layer 220 and an upper electrode 230 , and the piezoelectric layer 220 is located between the lower electrode 210 and the upper electrode 230 .

[0033] The electrical connection layer 300 formed on the piezoelectric layer 220 includes a metal connection, and two ends of the metal connection are respectively connected to t...

Embodiment 2

[0035] Embodiment 2 provides another BAW filter, refer to figure 2 , figure 2 Another BAW filter structure is shown, which not only includes the substrate 100, bulk acoustic wave resonators (210, 220, 230), electrical connection layer 300, sealing layer 400, capping layer 500 and protective layer in Embodiment 1 600, further comprising a mass load 240 for frequency adjustment, a thin film layer 250 for temperature compensation of the filter, a passivation layer 260 for protecting the resonator, and a stray wave suppression structure 270.

[0036] Wherein, the difference from Embodiment 1 is that the sealing layer 400 of the BAW filter in this embodiment is made of a photosensitive dry film.

[0037] The mass load 240 is used to adjust the frequency of the mass load, that is, by setting a load on the upper electrode 230, the frequency of the bulk acoustic wave resonator (210, 220, 230) is fine-tuned to meet the design requirements of the filter. Mass loads are generally met...

Embodiment 3

[0042] Embodiment 3 provides a kind of BAW-SMR filter, refer to image 3 , image 3 A schematic diagram of the structure of the BAW-SMR filter is shown. The BAW-SMR filter structure of the present invention includes: a substrate 100 , a Bragg reflector 800 , bulk acoustic wave resonators ( 210 , 220 , 230 ), an electrical connection layer 300 , a sealing layer 400 , a capping layer 500 and a protective layer 600 .

[0043]Specifically, the substrate 100 can be made of material Si or SiC, in image 3 In the described embodiment, the substrate does not have a lower cavity. A Bragg reflector 800 composed alternately of two materials with different acoustic impedances is disposed on the substrate 100, and the Bragg reflector 800 can effectively reduce the acoustic wave propagating to the substrate. Bulk acoustic wave resonators (210, 220, 230) are arranged on the Bragg reflector 800, and the bulk acoustic wave resonators (210, 220, 230) include a lower electrode 210, a piezoele...

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Abstract

The invention relates to the technical field of micro electro mechanical systems and semiconductors, in particular to a filter structure and a preparation method thereof. The preparation method of thefilter comprises the following steps: forming a substrate; arranging a bulk acoustic wave resonator on the substrate; forming an electric connection layer on the piezoelectric layer of the bulk acoustic wave resonator; forming a sealing layer on the electric connection layer; forming a cap layer on the sealing layer; and forming a protective layer on the cap layer, and forming a metal connectingline through hole in the protective layer on the outer side of the sealing layer. According to the preparation method of the filter, the existing technological process can be simplified, and the preparation time is shortened, and the production cost is reduced, and the filter prepared by the preparation method is small in thickness and light in weight.

Description

technical field [0001] The invention relates to the technical fields of micro-electromechanical systems and semiconductors, in particular to a filter and a preparation method thereof. Background technique [0002] The continuous development of 5G communication technology has put forward higher technical requirements for radio frequency devices such as miniaturization, high frequency, high performance, low power consumption, and low cost. As the core device of the RF front-end, the bulk acoustic wave filter has many advantages such as high operating frequency, small insertion loss, high withstand power, and small size. The urgent demand for devices has become a hot spot in the market. [0003] The preparation method of the bulk acoustic wave filter is mainly divided into three steps: the first step is to make a device wafer, that is, to complete the main structure of the filter on the first wafer; the second step is to make a cap wafer, that is, to A sealing gasket for form...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/54H03H9/02H03H9/10
CPCH03H9/54H03H9/02015H03H9/02086H03H9/02157H03H9/1007
Inventor 樊永辉张惠婷
Owner 深圳市汇芯通信技术有限公司
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