mems diaphragm and mems sensor chip

A technology of diaphragm and sensing part, which is applied in the field of MEMS diaphragm and MEMS sensor chip, can solve the problems of sensitivity variation, inability to accurately control film stress, low sensitivity of micro-electromechanical devices, etc., to achieve increased effective area and good acoustics Sensing performance, effect of increasing capacitance value

A technology of diaphragm and sensing part, which is applied in the field of MEMS diaphragm and MEMS sensor chip, can solve the problems of sensitivity variation, inability to accurately control film stress, low sensitivity of micro-electromechanical devices, etc., to achieve increased effective area and good acoustics Sensing performance, effect of increasing capacitance value

CN110775937BActive Publication Date: 2020-05-08SHANDONG GETTOP ACOUSTIC

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • mems diaphragm and mems sensor chip
  • mems diaphragm and mems sensor chip
  • mems diaphragm and mems sensor chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Before describing the embodiments in detail, it should be understood that the present invention is not limited to the detailed structures or arrangements of components described herein below or in the accompanying drawings. The present invention can be implemented in other ways. Also, it should be understood that the phraseology and terminology used herein are for descriptive purposes only and should not be interpreted as limiting. The terms "including", "comprising", "having" and similar expressions used herein are meant to include the items listed thereafter, their equivalents and other additional items. In particular, when "a certain component" is described, the present invention does not limit the number of the component to one, and may also include multiples.

[0031] Such as figure 1 Shown is a schematic structural view of the MEMS diaphragm in an embodiment of the present invention. The MEMS diaphragm 10 is applied in microelectromechanical devices, for exampl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an MEMS diaphragm and an MEMS sensor chip. The MEMS diaphragm comprises a sensing part and a peripheral part surrounding the periphery of the sensing part. A plurality of outergrooves and a plurality of inner grooves are formed between the peripheral part and the sensing part; the outer grooves are annularly distributed in the inner edge of the peripheral part, the tail ends of the outer grooves extend towards the inner side, the inner grooves are annularly distributed in the outer edge of the sensing part, the tail ends of the inner grooves extend towards the inner side, and the portion, corresponding to the tail ends of every two adjacent outer grooves, of each inner groove is sunken inwards to form an inwards-concave section.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems (MEMS, Micro-Electro-Mechanical System), in particular to a MEMS diaphragm and a MEMS sensor chip. Background technique [0002] Micro-electromechanical sensors have been widely used in various acoustic receivers or force sensors. Their small size, low power consumption, and high sensitivity have become design goals. According to the results of theoretical simulations, the influence of residual stress on The mechanical sensitivity of the vibrating membrane in acoustic sensors has a major influence. [0003] The capacitive sensor structure included in the MEMS device is generally a sensing film and a back electrode, forming a two-parallel capacitive plate structure to sense vibration or pressure change. Among them, the material properties of the sensing film determine the sensitivity performance of the component, but the thermal residual stress generated in the semiconducto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
08 May 2020
Publication
CN110775937B
IPC
B81B7/02; B81B7/00
CPC
B81B7/0048; B81B7/02; B81B2201/0257
Inventors
何宪龙