Component module

Abstract

The present invention provides an element module capable of suppressing an increase in thickness and suppressing an increase in wiring inductance. The element module includes: at least one switching element; a cooling body disposed on a first surface side in a thickness direction of the switching element; a heat transfer body disposed on a second surface side in a thickness direction of the switching element, And thermally connected with the second surface and the cooling body, the heat transfer body moves heat from the switching element to the cooling body; and a driving circuit, which drives the switching element to form the driving circuit At least one of the circuit element and the signal line is disposed on the heat transfer body.

Description

technical field [0001] The present invention relates to component modules. This application claims priority based on Japanese Patent Application No. 2018-146190 filed on August 2, 2018, the contents of which are incorporated herein by reference. Background technique [0002] Conventionally, there is known a power control unit that sandwiches a power module including a semiconductor device and a pair of DCBs (Direct Copper Bonding) sandwiching the semiconductor device from both sides in the thickness direction by a pair of coolers. Substrate (for example, refer to US Patent Application Publication No. 2017 / 0096066 specification). In this power control unit, the power module is cooled from both sides in the thickness direction by a cooler such as a water cooling jacket. [0003] However, in the above conventional power control unit, a pair of coolers are arranged on both sides in the thickness direction of the power module, so the problem of increasing the thickness and size...

AI Technical Summary

Problems solved by technology

Therefore, there is a possibility that wiring inductance increases due to an increase in the distance between the semiconductor device and the control substrate

For example, in the case of driving a semiconductor device at a high frequency with a gate signal, there is a possibility that the gate waveform may oscillate due to an increase in wiring inductance

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