Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Junction temperature prediction method of IGBT module for driver

A prediction method and driver technology, applied in neural learning methods, biological neural network models, neural architectures, etc., can solve problems such as junction temperature cannot be directly measured

Pending Publication Date: 2020-02-18
XI'AN POLYTECHNIC UNIVERSITY
View PDF11 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It solves the problem that the junction temperature of the IGBT module for the driver cannot be directly measured in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Junction temperature prediction method of IGBT module for driver
  • Junction temperature prediction method of IGBT module for driver
  • Junction temperature prediction method of IGBT module for driver

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Taking the 3300V / 200A IGBT module driver of the model FF200R33KF2C produced by Infineon as an example, the junction temperature prediction method of the IGBT module for the driver of the present invention is used to predict the junction temperature. Specific steps include:

[0037] Step 1. Sampling the 3300V / 200A IGBT module driver of the model FF200R33KF2C produced by Infineon, and divide the sampling data into training group data and test group data according to 3:1; the test group data is used to verify the correctness of the prediction results of this method ;

[0038] The specific sampling method is as follows: the DC power supply has set the current value Ic, and the DC value is taken as a value within the range of [1,75], and the value is changed by interval sampling, and then the IGBT module driver is powered on, and the trigger pulse signal is pressed. The IGBT module driver is turned on, the saturation voltage drop Vce is measured, and the corresponding colle...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a junction temperature prediction method for an IGBT module for a driver, and the method comprises the following specific steps: 1, carrying out the sampling of a measured IGBTmodule, and enabling the sampling data to serve as training group data; step 2, establishing a BP neural network model; 3, inputting the training group data into a BP neural network model for training; and 4, carrying out junction temperature real-time prediction on the IGBT module by adopting the trained BP neural network model, and outputting the predicted junction temperature. According to theinvention, the problem that the junction temperature of the IGBT module for the driver cannot be directly measured in the prior art is solved.

Description

technical field [0001] The invention belongs to the technical field of IGBT module drivers, and relates to a junction temperature prediction method of an IGBT module for a driver. Background technique [0002] GBT Insulated Gate Bipolar Transistor is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor). It is used in the conversion system with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. The operating temperature of the IGBT module is a very important parameter, which is related to the normal operation of the equipment. Because the IGBT chip is difficult to directly observe and contact directly inside the module, there is currently no device on the market that can realize online monitoring of the junction temperature of the IGBT module. Both chip failure and package...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06N3/04G06N3/08
CPCG06N3/084G06N3/044
Inventor 孟昭亮吕亚茹高勇杨媛艾胜胜方正鹏卢志鹏由梦雪
Owner XI'AN POLYTECHNIC UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com