Unlock instant, AI-driven research and patent intelligence for your innovation.

Physical vapor deposition equipment

A physical vapor deposition and equipment technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of poor film uniformity and achieve the effect of improving uniformity and uniform deposition process

Pending Publication Date: 2020-02-21
SHENZHEN JING XIANG TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the existing magnetron sputtering equipment, there is usually only one stage for placing the substrate, and the stage is fixed at the same time, so that the relative position of the target and the stage is relatively fixed, so sputtering ions The motion trajectory on the substrate is relatively fixed, resulting in poor uniformity of the formed film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Physical vapor deposition equipment
  • Physical vapor deposition equipment
  • Physical vapor deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0034] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface areaaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides physical vapor deposition equipment. The equipment comprises a growth chamber, at least one first carrying table and a plurality of second carrying tables, wherein the at leastone first carrying table is arranged in the growth chamber, the plurality of second carrying tables are arranged on the first carrying table, and the rotating speeds of the plurality of second carrying tables are different from the rotating speed of the first carrying table. The physical vapor deposition equipment is reasonable in design, and can improve the uniformity of the coating.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a physical vapor deposition equipment. Background technique [0002] As a common physical vapor deposition method, magnetron sputtering has been successfully applied to the preparation of different thin films. The magnetron sputtering method uses the characteristic that charged ions have certain kinetic energy after being accelerated in an electric field, and guides the ions to the material to be sputtered (sputtering target) as the target electrode (cathode). When the energy of the ions is suitable, the incident ions collide with the atoms on the surface of the target, and the latter are sputtered out. These sputtered atoms have a certain kinetic energy, and will fly in a certain direction and shoot towards the substrate. and deposited on the substrate to achieve thin film growth. During the sputtering process, the gas pressure and power of the sputtering can be controlled and th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/50
CPCC23C14/35C23C14/505
Inventor 陈卫军刘岩军林信南刘美华
Owner SHENZHEN JING XIANG TECH CO LTD