Voltage clamping circuit, device and system for testing dynamic resistance of wide bandgap semiconductor switching device
A wide bandgap semiconductor, dynamic resistance technology, applied in emergency protection circuit devices, circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, etc. Resistance, lack, etc.
Pending Publication Date: 2020-02-28
SUN YAT SEN UNIV
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Therefore, it is difficult to detect the dynamic resistance change during the conduction moment of GaN HEMT under test, and the detection delay is long, which is not conducive to the observation of dynamic resistance phenomenon
[0005] In addition, existing test methods or equipment lack control devices that can quantitatively control voltage stress, voltage stress time, package temperature, stress current, switching mode, and other test conditions that may cause dynamic resistance changes
[0006] Furthermore, the existing test methods or equipment mostly use the traditional double-pulse detection method, which cannot completely restore the actual application conditions of GaN HEMTs in circuits.
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[0055] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0056] In the prior art, a voltage clamping circuit is introduced to ensure the voltage measurement accuracy requirement of the conduction state. However, after the voltage clamping circuit is added, due to the parasitic capacitance of the voltage clamping circuit, it will form an RC delay problem with the resistance, so it cannot be detected at the clamping point that the device under test is turned on at both ends of the drain source. Voltage signal, causes the detection delay problem of about 200us; And because the limitation of the response speed of passive device (as the reverse recovery time of clamping diode) also can cause the problem of measurement delay; Th...
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The invention discloses a voltage clamping circuit for testing dynamic resistance of a wide bandgap semiconductor switching device, and the circuit comprises a high-voltage blocking sub-circuit, a voltage stabilizing sub-circuit, an anti-oscillation sub-circuit, a filtering sub-circuit and an FPGA main control circuit. The circuit provided by the invention has the characteristic of low measurementdelay. The invention further discloses a test condition controllable device for testing the gallium nitride HEMT dynamic resistance. The device comprises a voltage clamping circuit for testing the dynamic resistance of the gallium nitride HEMT, a voltage stress control circuit, a current control circuit, a switch mode control circuit and a packaging temperature control circuit; on the premise that the detection delay is greatly reduced, various factors in the detection process can be controlled, and a guarantee is provided for the accuracy of dynamic resistance detection. The invention also discloses a test system for testing the dynamic resistance of the gallium nitride HEMT, and the test system can restore a real application environment for detecting the dynamic resistance, thereby completing the accuracy observation of the dynamic resistance.
Description
technical field [0001] The invention belongs to the technical field of dynamic resistance detection of wide bandgap semiconductors, in particular to a voltage clamping circuit, device and system for testing the dynamic resistance of wide bandgap semiconductor switching devices. Background technique [0002] Wide-bandgap semiconductor gallium nitride HEMT, known as the third-generation semiconductor material, such as gallium nitride HEMT (that is, gallium nitride high electron mobility switch tube), is a new type of semiconductor gallium nitride HEMT, due to its Its performance is better than that of traditional silicon gallium nitride HEMT in designing high-efficiency power switching converters, so it has broad application prospects in the field of power electronics. [0003] However, during the use of the gallium nitride HMET, there are factors that cause its performance degradation, specifically, the change of the dynamic resistance of the gallium nitride HEMT is one of th...
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Login to View More IPC IPC(8): G01R27/08H02H9/04
CPCG01R27/08H02H9/04
Inventor 刘扬王自鑫王帅兵蔡英明黄伟昊
Owner SUN YAT SEN UNIV