Radiation hardening silicon-based bipolar transistor structure based on self-built electric field and preparation method

Abstract

The invention discloses a radiation hardening silicon-based bipolar transistor structure based on a self-built electric field and a preparation method. The bipolar transistor structure is formed through multilayer wiring: through the multilayer wiring, a ground potential layer communicated with the lowest potential is formed on the surface of a transistor so as to form the self-built electric field pointing to the ground potential layer in a silicon dioxide insulating layer between each doped region of the transistor and the ground potential layer. The self-built electric field inhibits positive charges generated by total dose radiation in the silicon dioxide insulating layer from moving to a silicon-silicon dioxide interface, so that the number of the positive charges induced by radiationin reaching the silicon-silicon dioxide interface and forming a new interface state is reduced, and the total dose radiation resistance of the bipolar transistor is improved.

Description

technical field [0001] The invention belongs to the technical field of silicon-based transistors, and in particular relates to a radiation-hardened silicon-based bipolar transistor structure and a preparation method based on a self-built electric field. Background technique [0002] Conventional silicon-based bipolar transistors include NPN transistors and PNP transistors. Their structures are selectively doped with P-type or N-type impurities in different regions of the silicon substrate or epitaxial layer to form NPN or PNP structures, and are realized by wires. The final transistor structure also needs to cover a layer of silicon dioxide on the surface of the transistor as an insulating layer between the metal lead and the doped region of the transistor to avoid short circuits between different doped regions of the transistor through metal connections. [0003] When the silicon-based bipolar transistor is irradiated with the total dose, the radiation ionization effect wil...

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Problems solved by technology

[0003] When the silicon-based bipolar transistor is irradiated with the total dose, the radiation ionization effect will cause a large amount of radiation-induced positive charges to be generated in the silicon dioxide insulating layer on the surface of the transistor. When these positive charges move to the silicon-silicon dioxide interface, It will react with the dangling bonds at the interface to generate new interface states, increase the recombination center on the surface of the transistor base, increase the recombination current of the transistor, and decrease the gain, which will cause the transistor to fail under the action of total dose radiation

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