Method for forming semiconductor device

Abstract

A method for forming a semiconductor device includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.

Description

technical field [0001] Embodiments of the present invention relate to methods of forming semiconductor devices, and more particularly to methods of depositing conductive layers. Background technique [0002] Semiconductor devices have been used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. The manufacturing method of semiconductor devices is usually to sequentially deposit insulating or dielectric layers, conductive layers, and semiconductor layer materials on the semiconductor substrate, and use lithography to pattern various material layers to form circuit components and units on the semiconductor substrate. . [0003] Innovative semiconductor technologies in the semiconductor industry, such as continuous reduction in minimum structure size, three-dimensional transistor structures (such as fin field effect transistors), increasing the number of interconnection layers, and non-semiconducto...

AI Technical Summary

Problems solved by technology

Integrating multiple functions on one chip usually faces new challenges when forming and integrating multiple electronic components and transistor structures

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