Semiconductor memory preparation method and semiconductor memory

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a preparation method of a semiconductor memory and the semiconductor memory. The preparation method of thesemiconductor memory comprises the following steps: providing a substrate; forming a first device, a second device and a third device to be subjected to ion implantation on the substrate; covering the third device with a first photomask so as to carry out graphical processing on the first device and the second device; and simultaneously injecting at least one kind of ions into the first device and the second device, wherein the injection dosages of the same kind of ions in the first device and the second device are the same. The technical scheme can shorten the production period of the semiconductor memory and reduce the production cost.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for preparing a semiconductor memory and the semiconductor memory. Background technique [0002] In related technologies, semiconductor memories such as DRAM (Dynamic Random Access Memory, Dynamic Random Access Memory) include multiple types of control devices, and different types of control devices perform electrical adjustments independently, that is, different types of control devices perform electrical adjustments independently. In the ion implantation process, when producing semiconductor devices, the steps of ion implantation are increased, thereby prolonging the production cycle of the semiconductor memory and increasing the production cost. [0003] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the application, and there...

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Problems solved by technology

[0002] In related technologies, semiconductor memories such as DRAM (Dynamic Random Access Memory, Dynamic Random Access Memory) include multiple types of control devices, and different types of control devices perform electrical adjustments independently, that is, different types of control devices perform electrical adjustments independently. Ion implantation process, so that when producing semiconductor devices, the steps of ion implantation are increased, which leads to the extension of the production cycle of semiconductor memory and the increase of production cost

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