Semiconductor memory preparation method and semiconductor memory

A memory and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of increasing ion implantation steps, prolonging the production cycle of semiconductor memory, increasing production costs, etc., and reducing ion implantation. Steps, shorten the production cycle, reduce the effect of production costs

Inactive Publication Date: 2020-03-17
CHANGXIN MEMORY TECH INC
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Problems solved by technology

[0002] In related technologies, semiconductor memories such as DRAM (Dynamic Random Access Memory, Dynamic Random Access Memory) include multiple types of control devices, and different types of control devices perform electrical adjustments independently, that is, different types of control devices perform electrical adjustments independently. Ion implantation process, so that when producing semiconductor devices, the steps of ion implantation are increased, which leads to the extension of the production cycle of semiconductor memory and the increase of production cost

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  • Semiconductor memory preparation method and semiconductor memory
  • Semiconductor memory preparation method and semiconductor memory
  • Semiconductor memory preparation method and semiconductor memory

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Embodiment Construction

[0044] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this application will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0045] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience, for example, according to the description in the accompanying drawings directions for the example described above. It will be appreciated that if the illustrated device is turned over s...

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Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a preparation method of a semiconductor memory and the semiconductor memory. The preparation method of thesemiconductor memory comprises the following steps: providing a substrate; forming a first device, a second device and a third device to be subjected to ion implantation on the substrate; covering the third device with a first photomask so as to carry out graphical processing on the first device and the second device; and simultaneously injecting at least one kind of ions into the first device and the second device, wherein the injection dosages of the same kind of ions in the first device and the second device are the same. The technical scheme can shorten the production period of the semiconductor memory and reduce the production cost.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for preparing a semiconductor memory and the semiconductor memory. Background technique [0002] In related technologies, semiconductor memories such as DRAM (Dynamic Random Access Memory, Dynamic Random Access Memory) include multiple types of control devices, and different types of control devices perform electrical adjustments independently, that is, different types of control devices perform electrical adjustments independently. In the ion implantation process, when producing semiconductor devices, the steps of ion implantation are increased, thereby prolonging the production cycle of the semiconductor memory and increasing the production cost. [0003] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the application, and there...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242H01L21/265
CPCH01L21/265H10B12/01H10B12/00
Inventor 刘铁
Owner CHANGXIN MEMORY TECH INC
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