Memory programming method, device, storage device and storage medium

A programming method and memory technology, applied in static memory, read-only memory, information storage and other directions, can solve the problems of poor shrinking effect, increase the complexity of the hardware structure of the memory, and increase the cost of memory production, so as to reduce the distribution width, The effect of reducing readdisturb phenomenon and improving reliability

Active Publication Date: 2021-10-29
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the process of implementing the present invention, the inventors found that the prior art has the following defects: the narrowing effect on the threshold voltage distribution width after the memory cell is programmed is poor, and due to the need to additionally increase the voltage pulse for applying the above-mentioned fixed voltage value The circuit of the signal increases the complexity of the hardware structure of the memory, and also increases the manufacturing cost of the memory

Method used

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  • Memory programming method, device, storage device and storage medium
  • Memory programming method, device, storage device and storage medium
  • Memory programming method, device, storage device and storage medium

Examples

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Embodiment 1

[0044] Figure 1aIt is a flow chart of a memory programming method provided by Embodiment 1 of the present invention. The method of this embodiment can be executed by a memory programming device, which can be implemented by hardware and / or software, and can generally be integrated into a memory in the device. The method of this embodiment specifically includes:

[0045] S101. Perform a first programming operation on memory cells to be programmed in a selected word line, where a programming completion verification voltage corresponding to the first programming operation is a first verification voltage.

[0046] S102 . Among all the memory cells to be programmed, memory cells whose thresholds are lower than the second verification voltage are used as reprogramming cells.

[0047] S103 , performing a second programming operation on the reprogrammed unit, and the programming completion verification voltage corresponding to the second programming operation is a second verification...

Embodiment 2

[0069] Figure 2aIt is a flow chart of a memory programming method provided by Embodiment 2 of the present invention. This embodiment is optimized on the basis of the above-mentioned embodiments. In this embodiment, a voltage application method that embodies the second programming operation is given, and a specific implementation manner of the first programming process is embodied.

[0070] Correspondingly, the method in this embodiment specifically includes:

[0071] S201. Apply a word line programming pulse voltage to the selected word line, and when each pulse in the word line programming pulse voltage ends, detect whether the conduction threshold of the memory cell to be programmed in the selected word line is greater than or equal to the bit line voltage threshold , if no, execute step 201 again, and if yes, execute step 202.

[0072] In this embodiment, the first-time programming process is specified, and steps 201 to 207 are specific steps of the first-time programmin...

Embodiment 3

[0102] image 3 It is a structural diagram of a memory programming device provided in Embodiment 3 of the present invention. Such as image 3 As shown, the device includes: a first programming module 301, a storage unit screening module 302 and a second programming module 303, wherein:

[0103] The first programming module 301 is configured to perform the first programming operation on the memory cells to be programmed in the selected word line, and the programming completion verification voltage corresponding to the first programming operation is the first verification voltage;

[0104] A memory cell screening module 302, configured to use memory cells whose threshold value is less than the second verification voltage among all memory cells to be programmed as reprogramming cells;

[0105] The second programming module 303 is configured to perform a second programming operation on the reprogrammed cells, and the programming completion verification voltage corresponding to t...

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Abstract

The embodiment of the invention discloses a memory programming method, device, storage device and storage medium. The method includes: performing the first programming operation on the memory cells to be programmed in the selected word line, and the programming completion verification voltage corresponding to the first programming operation is the first verification voltage; The memory cell of the verification voltage is used as a reprogramming unit; the second programming operation is performed on the reprogramming unit, and the programming completion verification voltage corresponding to the second programming operation is the second verification voltage, wherein the second verification voltage is greater than the first verification voltage. The technical solution of the embodiment of the present invention realizes that the distribution width of the threshold value of the memory cell after programming can be reduced simply and effectively without additional hardware circuits, and then the voltage applied to the unselected word line during the read operation can be reduced , so as to weaken the readdisturb phenomenon and improve the reliability of the memory.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of storage devices, and in particular, to a memory programming method, device, storage device, and storage medium. Background technique [0002] Due to the problem of process fluctuations in the production process of the memory, the intrinsic threshold voltage distribution of the memory cell is in a Gaussian distribution state, and the programming speed of different memory cells is different, which results in a page or a block in the memory. The memory cells have different threshold voltages after programming or erasing, and the threshold distribution width is wider. The wider threshold voltage distribution will limit the reduction of the voltage applied to the unselected word lines during the read operation, which will lead to serious read disturbance phenomenon. In addition, the wider threshold voltage distribution will also cause a larger voltage difference between the substrate and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34G11C16/08
CPCG11C16/08G11C16/3427
Inventor 林子曾刘会娟胡洪陈立刚
Owner GIGADEVICE SEMICON (BEIJING) INC
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