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Preparation method of Ga2O3 and SnO2 mixed phase film with preferential orientations

A preferred orientation, mixed phase technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of difficult adjustment of single preferred orientation

Active Publication Date: 2020-03-27
山西中青电新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] To solve Ga 2 o 3 and SnO 2 Ga in miscible film 2 o 3 and SnO 2 All have a single preferred orientation, which is difficult to control, and realize Ga with preferred orientation. 2 o 3 and SnO 2 Practical problems with miscible films, the present invention provides a Ga 2 o 3 and SnO 2 Preparation method of miscible membrane

Method used

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  • Preparation method of Ga2O3 and SnO2 mixed phase film with preferential orientations
  • Preparation method of Ga2O3 and SnO2 mixed phase film with preferential orientations

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[0016] The present invention provides a Ga with preferred orientation 2 o 3 and SnO 2 The preparation method of the miscible membrane is characterized in that: the preparation method is carried out according to the following steps:

[0017] (1) Ga 2 o 3 Powder, SnO 2 The powder and the carbon powder are mixed in a mass ratio of 1:0.01-2:1 and fully ground to obtain a solid mixed powder;

[0018] (2) Using the mixed powder as the reaction source, place the substrate and the reaction source in a high-temperature tube furnace, the temperature of the reaction source is 800°C-1200°C, and use the chemical vapor deposition method to reduce Ga by hot carbon 2 o 3 and SnO 2 Provide Ga source and Sn source, take oxygen as oxygen source, inert gas as carrier gas, flow ratio of oxygen and inert gas is 0.1-20mL / min: 0-100mL / min, substrate temperature is 800°C-1300°C, growth The pressure is 1 Pa-10 5 Pa, the deposition time is 5 min-60 min, and Ga with preferred orientation is obt...

Embodiment 1

[0031] Ga 2 o 3 Powder, SnO 2 Powder and carbon powder are mixed in proportion and fully ground to obtain solid mixed powder, Ga 2 o 3 Powder, SnO 2 The mass ratio of powder to carbon powder mixed powder is 1:1:1; the mixed powder is placed in a ceramic boat as a reaction source, and the ceramic boat and c -Ga 2 o 3 The substrate was placed in a high-temperature tube furnace; the ratio of oxygen and argon was 7 mL / min: 30 mL / min. The temperature of the reaction source is 1130 °C, the temperature of the substrate is 1130 °C; the growth vacuum is 30 Pa; the deposition time is 30 min; the thickness of the miscible film is 450 nm, and the optical band gap is 5.1 eV; figure 1 ,exist c -Ga 2 o 3 Mixed-phase films grown on SnO 2 For (200) preferred orientation, β-Ga 2 o 3 It is (-201) preferred orientation, and all of them are single preferred orientation.

Embodiment 2

[0033] Ga 2 o 3 Powder, SnO 2 Powder and carbon powder are mixed in proportion and fully ground to obtain solid mixed powder, Ga 2 o 3 Powder, SnO 2 The mass ratio of powder to carbon powder mixed powder is 1:0.5:1; the mixed powder is placed in a ceramic boat as the reaction source, and the ceramic boat and quartz substrate are placed in a high-temperature tube furnace; the ratio of oxygen and argon is 7 mL / min: 30 mL / min; the reaction source temperature is 1050 °C, the substrate temperature is 1050 °C; the growth vacuum is 30 Pa; the substrate is treated at 1050 °C for 10 min before growth, and the deposition time is 30 min; the mixed-phase film thickness is 750 nm, the optical bandgap is 4.7 eV; figure 2 , quartz forms (101) α-SiO during heat treatment 2 ; In the grown miscible film, SnO 2 For (200) preferred orientation, β-Ga 2 o 3 It is (-201) preferred orientation, and all of them are single preferred orientation.

[0034] The above examples, by selecting and...

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Abstract

The invention discloses a preparation method of a Ga2O3 and SnO2 mixed phase film with preferential orientations. The method comprises the following steps that Ga2O3 powder and SnO2 powder are mixed with carbon powder proportionally and ground, solid mixed powder is obtained and used as a reaction source, a substrate and the reaction source are placed in a high temperature tubular furnace, a chemical vapor deposition method is utilized, a Ga source and a Sn source are provided by thermal carbon reduction of Ga2O3 and SnO2, oxygen is used as an oxygen source, inert gas is used as carrier gas, and under the conditions of certain reaction source temperature, substrate temperature, growth pressure, deposition time and the ration of the carrier gas to the oxygen, the Ga2O3 and SnO2 mixed phasefilm with the preferential orientation is obtained on a substrate. The method realizes that Ga2O3 and SnO2 both have single preferred orientations, the process is simple, the equipment is cheap, and the method has potential application in the fields of ultraviolet detection, transparent conductive oxide, high power devices, light emitting diodes, ultraviolet detection, thin film transistors, gas sensors, magnetic semiconductors and the like.

Description

technical field [0001] The present invention relates to a Ga 2 o 3 and SnO 2 Method for the preparation of miscible films, especially a Ga 2 o 3 and SnO 2 The invention relates to a preparation method of a mixed-phase film, which belongs to the technical field of wide bandgap semiconductor materials. Background technique [0002] Due to the regulation of the interface between different phases, the optimally designed mixed-phase materials have excellent magnetic, piezoelectric, photoelectric conversion and catalytic properties. The impact of performance, highlighting the regulation of the interface between different phases on material properties, each single-phase material must have a single preferred orientation, that is, to achieve a mixed-phase material with a preferred orientation; Ga 2 o 3 Ga 2 o 3 A mixed-phase structure that is easy to appear in the system comes from the doping process, and excessive Sn doping will lead to SnO 2 phase from Ga 2 o 3 Precipit...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/44
CPCC23C16/40C23C16/44
Inventor 范明明曹铃李秀燕
Owner 山西中青电新能源有限公司
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