Dynamic random access memory, memory management method and system and storage medium

A dynamic random access and memory technology, applied in the computer field, can solve the problem that the interaction speed between the central processing unit and the large-capacity storage device affects the operation efficiency, and achieve the effect of improving the operation efficiency

Active Publication Date: 2020-03-31
HOSIN GLOBAL ELECTRONICS CO LTD
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a dynamic random access memory, a memory management method, a system, and a storage medium for the problem that the interaction speed between the central processing unit and the large-capacity storage device affects the operating efficiency in the above-mentioned computer system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dynamic random access memory, memory management method and system and storage medium
  • Dynamic random access memory, memory management method and system and storage medium
  • Dynamic random access memory, memory management method and system and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0031] Such as figure 1 Shown is a schematic diagram of a DRAM provided by an embodiment of the present invention. The DRAM can be applied to a computer system, such as a cloud server, and is used to temporarily store programs and data executed by a central processing unit. The DRAM of this embodiment includes a circuit substrate 10 and a DRAM chipset 11 integrated on the circuit substrate 10 , a memory controller 12 , a first interface 13 and a second interface 14 . The above-mentioned DRAM chipset 11 may specifically include a plurality of DRAM chip particles.

[0032] Above-mentioned first int...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a dynamic random access memory, a memory management method, a memory management system and a storage medium. The dynamic random access memory comprises a circuit substrate, anda DRAM chipset, a memory controller, a first interface and a second interface which are integrated on the circuit substrate, the memory controller is respectively connected with the DRAM chipset and afirst interface and responds to a read-write request of the central processing unit connected to the first interface; the memory controller is connected with the second interface; and when the instruction set read by the central processing unit in the DRAM chipset meets a preset condition, acquiring a subsequent instruction set of the instruction set in the DRAM chipset from a large-capacity storage device through the second interface, and storing the subsequent instruction set in the DRAM chipset. The method can enable the central processing unit to be always in an efficient operation state,is suitable for the fields of cloud calculation and the like, and can greatly improve the operation efficiency of the system.

Description

technical field [0001] The present invention relates to the computer field, and more specifically, relates to a dynamic random access memory, a memory management method, a system and a storage medium. Background technique [0002] At present, DRAM (Dynamic Random Access Memory, dynamic random access memory) technology has achieved great development, and the main applications are synchronous dynamic random access memory (SDRAM), double data rate (DDR) SDRAM, and the second generation of double data rate (DDR2) SDRAM, 3rd generation double data rate (DDR3) SDRAM and 4th generation double data rate (DDR4) SDRAM and many other types. For the above-mentioned types of DRAM, the memory controller and the DRAM chip (i.e. memory particles) are generally used, and the CPU (central processing unit) sends control commands to the DRAM chip via the memory controller, including clock signals, command control signals, and addresses. Signals, etc., and control the read and write operations ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06G06F13/16G06F9/32
CPCG06F3/061G06F3/0658G06F3/0673G06F13/1668G06F9/321Y02D10/00
Inventor 赖振楠
Owner HOSIN GLOBAL ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products