Preparation method of flexible electrode complex pattern based on nanowire material

A flexible electrode and nanowire technology, which is applied in the direction of nanotechnology, metal material coating technology, and technology for producing decorative surface effects, etc., can solve the problems of low utilization rate of nanowire materials, low efficiency of mask placement, and low production efficiency and other problems, to achieve the effect of high pattern preparation efficiency, good application prospects, and high material utilization rate

Active Publication Date: 2020-04-03
HARBIN INST OF TECH AT WEIHAI
View PDF9 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] (1) The utilization rate of nanowire materials is low
Most nanowire material is wasted during coating and mask removal
[0004] (2) The resolution of the prepared pattern is relatively low
The nanowires located in the mask opening area and the nanowires on the mask surface are bonded together due to the van der Waals force after drying, and the edge area of ​​the nanowire pattern is easily destroyed during the mask uncovering process.
This edge fragmentation is exacerbated as the thickness of the nanowire film increases
[0005] (3) It is difficult to efficiently prepare complex nanowire patterns with closed-loop structures
When there are multiple closed-loop areas, multiple independent masks need to be used, resulting in low efficiency and low accuracy of mask placement before coating, and it is impossible to remove all masks at once after coating
The more closed loop area, the lower the preparation efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of flexible electrode complex pattern based on nanowire material
  • Preparation method of flexible electrode complex pattern based on nanowire material
  • Preparation method of flexible electrode complex pattern based on nanowire material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Combine below figure 1 , figure 2 and image 3 This embodiment will be described, and this embodiment includes the following steps.

[0030] (1) Cover the filter membrane on the suction filter port of the container with a negative pressure environment, cover the 3D rubber mask with an inner hole structure on the filter membrane, press the tubular container with a smooth bottom on the 3D rubber mask, and use a clip After fixing, pour 250mL of silver nanowire solution with a concentration of 25ug / mL into the top container for suction filtration; the suction filter port is circular with a diameter of 40mm, and the filter aperture is 10-50um. The 3D rubber mask is made of PDMS material, and the inner hole and the bottom target pattern groove are prepared by the reverse molding process. The groove is a 17×17mm grid pattern with a depth of 1mm.

[0031] (2) After all the liquid has been filtered, remove the top container and 3D mask in turn, and then use tweezers to trans...

Embodiment 2

[0035] Combine below figure 1 , figure 2 and Figure 4 This embodiment will be described, and this embodiment includes the following steps.

[0036] (1) Cover the filter membrane on the suction filter port of the container with a negative pressure environment, cover the 3D rubber mask with an inner hole structure on the filter membrane, press the tubular container with a smooth bottom on the 3D rubber mask, and use a clip After fixing, pour 250mL of nano-copper wire solution with a concentration of 25ug / mL into the top container for suction filtration; the suction filter port is circular with a diameter of 40mm, and the filter aperture is 10-50um. The 3D rubber mask is made of PDMS material, and the inner hole and the bottom target pattern groove are prepared by the reverse molding process. The groove is a double ring pattern with a depth of 1mm.

[0037] (2) After all the liquid has been filtered, remove the top container and 3D mask in turn, and then use tweezers to tran...

Embodiment 3

[0041] Combine below figure 1 , figure 2 and Figure 5 This embodiment will be described, and this embodiment includes the following steps.

[0042] (1) Cover the filter membrane on the suction filter port of the container with a negative pressure environment, cover the 3D rubber mask with an inner hole structure on the filter membrane, press the tubular container with a smooth bottom on the 3D rubber mask, and use a clip After fixing, pour 250mL of carbon nanotube solution with a concentration of 25ug / mL into the top container for suction filtration; the suction filter port is circular with a diameter of 40mm, and the filter aperture is 10-50um. The 3D rubber mask is made of PDMS material. The inner hole and the target pattern groove at the bottom are prepared by the reverse molding process. The groove double-ring + cross-shaped closed-loop pattern has a depth of 1mm.

[0043] (2) After all the liquid has been filtered, remove the top container and 3D mask in turn, and th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to the field of flexible electronic material manufacturing, and discloses a novel nanowire-based electrode pattern preparation method. The method mainly comprises the following steps: (1) covering a suction filtration port of a negative pressure environment container with a filter membrane, covering the filter membrane with a 3D rubber mask with an inner hole structure, pressing a tubular container with a smooth bottom on the 3D rubber mask, fixing the tubular container with a clamp, and pouring a nanowire solution into the container at the top for suction filtration; (2)after all the liquid is subjected to suction filtration, sequentially taking down the top container and the 3D rubber mask, then transferring the filter membrane to a workbench through tweezers, wherein the workbench can be made of glass or hard plastic or the like, and a double faced adhesive tape is attached to the upper surface of the workbench; and (3) after the filter membrane is completelydried, coating the filter membrane with the liquid organic resin material to be cured and the like, and tearing off the organic resin after the liquid organic resin material to be cured and the like are cured, so as to obtain the nanowire / organic resin flexible electrode with a specific pattern. The 3D rubber mask with the inner through hole structure is innovatively designed, in combination witha vacuum filtration system, complex electrode patterns with clear boundaries can be efficiently prepared, the material utilization rate can reach 95% or above, and the method is suitable for large-scale production of flexible electronic materials and has wide application prospects.

Description

technical field [0001] The invention relates to a method for preparing complex patterns for flexible electronic materials based on nanowire materials, and belongs to the technical field of flexible electronic processing. Background technique [0002] The development of flexible electronic wearable devices is making our life more convenient, so it has received extensive attention. In order to realize the sensing function of flexible electronic devices, before the preparation of flexible electronic devices, it is necessary to use nanowire materials to prepare specific patterns on the workbench. At present, the conventional preparation method of nanowire pattern is mainly completed through the steps of "2D mask covering → nanowire spin coating / drop coating → 2D mask stripping". There are serious shortcomings in this conventional method, mainly including three aspects. [0003] (1) The utilization rate of nanowire materials is low. Most of the nanowire material is wasted duri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B82Y40/00
CPCB81C1/00031B82Y40/00B81C2201/0187
Inventor 陈刚杨明张鸿名
Owner HARBIN INST OF TECH AT WEIHAI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap