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A method for temperature-controlled bubbling exfoliation of two-dimensional materials grown on sapphire substrates

A sapphire substrate, two-dimensional material technology, applied in analytical materials, chemical instruments and methods, material analysis using wave/particle radiation, etc. Solve the problems of two-dimensional material transfer on the sapphire substrate, affecting the quality and quality stability of the transferred products, and achieve the effects of easy configuration, improved cleanliness, and good scalability

Active Publication Date: 2020-08-04
EAST CHINA NORMAL UNIV
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  • Claims
  • Application Information

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Problems solved by technology

However, these methods are not completely suitable for sapphire substrates with high temperature resistance and good electrical insulation, and there are uncertainties in the process conditions, which affect the quality and quality stability of the transferred products.
Therefore, the existing technology cannot well solve the transfer of two-dimensional materials on the sapphire substrate.

Method used

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  • A method for temperature-controlled bubbling exfoliation of two-dimensional materials grown on sapphire substrates
  • A method for temperature-controlled bubbling exfoliation of two-dimensional materials grown on sapphire substrates

Examples

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Embodiment 1

[0022] The two-dimensional material of this embodiment selects tungsten disulfide-molybdenum disulfide heterojunction, refer to figure 1 , the specific preparation process is as follows:

[0023] Step 1: Take a sample of a two-dimensional material grown by vapor deposition on a sapphire substrate, such as figure 1 As shown in (a), set the speed of the homogenizer 3, the forward rotation is 600 rpm, the time is 10 seconds; the rear rotation is 1200 rpm, the time is 60 seconds, and the sapphire substrate 1 is fixed on the homogenizer by air pressure adsorption 3 on. Take an appropriate amount of PMMA glue on the surface of the sample with a glue dropper to cover two-thirds of the surface of the sample, start the glue homogenizer 3, and form a PMMA film 4 with uniform thickness on the surface of the area 2 where the two-dimensional material grows, to obtain a sapphire substrate - Two-dimensional material - PMMA film 7;

[0024] Step 2: Adjust the first heating stage 5 to 150°C...

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Abstract

The invention discloses a method for controlling bubble through temperature to strip a two-dimensional material growing on a sapphire substrate. The method comprises the steps of heating the holes controlled by the two-dimensional material on the sapphire substrate with a high temperature to expand a gas therein, breaking through the chemical bond binding force of the two-dimensional material andthe sapphire substrate, and meanwhile, utilizing the bubbles of an aqueous solution of NH4OH and H2O2 to provide the traction force to separate a two-dimensional material-PMMA film from the sapphire substrate. The method provided by the invention has the advantages of simple operation, economy, high efficiency, better expansibility and the like, and can obtain a high-quality two-dimensional material sample.

Description

technical field [0001] The invention relates to the technical field of preparation and characterization of nanometer materials, in particular to a method for transferring two-dimensional materials grown on a sapphire substrate. Background technique [0002] In the research of two-dimensional materials and their application requirements, sapphire is often used as the substrate of choice for large-scale preparation of two-dimensional materials. But transferring two-dimensional materials grown on chemically inert sapphire substrates is very difficult compared to conventional silicon dioxide substrates. The reason is that the bonding force between the sapphire substrate and the two-dimensional material is stronger than the Van der Waals force, and the sapphire substrate has strong alkali etching resistance, and the traditional potassium hydroxide solution etchant cannot make the PMMA-sample combination separated from the sapphire substrate. In addition, compared with metal sub...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/2005C01B32/194
CPCC01B32/194G01N23/2005
Inventor 吴幸陈新倩徐何军
Owner EAST CHINA NORMAL UNIV
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