Totally-enclosed IGBT trench gate structure

A fully enclosed, closed structure technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as electric field concentration, and achieve the effects of optimizing performance, suppressing EMI noise, and suppressing rise

Active Publication Date: 2020-04-14
NARI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a fully enclosed IGBT trench gate structure to solve the technical problem in the prior art that the electric field is concentrated at the end of the trench gate

Method used

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  • Totally-enclosed IGBT trench gate structure

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Embodiment Construction

[0018] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0019] It should be noted that all directional indications (such as up, down, left, right, front, back...) in the embodiments of the present invention are only used to explain the relative relationship between the various components in a certain posture (as shown in the drawings). When the positional relationship, movement conditions, etc., if the specific posture changes, the directional indication will also change accordingly. Furthermore, the terms "installed", "disposed", "provided", "connected", "connected", "socketed" are to be interpreted broadly. For example, it may be a fixed connection, a detachable connection, or an integral structure; it may be a mechanical connection or an electrical connection; it may be a direct connection or an indirect connection through an intermediary; internal connectivity. Those of ordinary skill in the art can understa...

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Abstract

The invention discloses a totally-enclosed IGBT trench gate structure, which comprises a plurality of arranged cellular regions, the cellular region comprises two adjacent active trenches; two ends oftwo adjacent active trenches are respectively bridged through the active trenches to form a first closed structure; two adjacent virtual grooves are formed in the first closed structure; two ends oftwo adjacent virtual grooves are respectively bridged through the virtual grooves to form a second closed structure; a floating P well region is formed in the second closed structure; and the active trench and the virtual trench are respectively set to be of a closed structure. The problem of electric field concentration caused by a single tip structure is avoided; device performance is optimized,meanwhile, the virtual groove is set to be of the closed structure; the absolute floating of the floating region in the virtual trench is realized, the difficulty that the hole of the floating regionmoves along the direction of the trench and is discharged from an emitting electrode is increased, the resistance between the emitting electrode and the floating region is infinite, the rising of thepotential of the floating region due to hole discharge is inhibited, the output curve oscillation is avoided, and the EMI noise of the IGBT is inhibited.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to a fully enclosed IGBT trench gate structure. Background technique [0002] The IGBT often adopts a trench gate structure. In order to reduce the turn-on voltage drop of the device, the dummy trench gate is usually used to set the floating region of the device. The holes in the floating area of ​​the device move along the direction of the trench and are discharged from the emitter, which will cause a rapid increase in the potential of the floating area, further causing a negative capacitance C between the gate and the emitter. EG increases, resulting in dv during device turn-on CE / dt is uncontrollable, causing EMI noise in the IGBT device circuit. [0003] On the other hand, in the existing work, the end of the trench gate at the gate-source connection is generally an unclosed tip structure, which easily makes the electric field concentrate at the end of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/06H01L29/739
CPCH01L29/4236H01L29/0684H01L29/7397
Inventor 郑婷婷李宇柱李伟邦骆健董长城叶枫叶黄全全
Owner NARI TECH CO LTD
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