Method for realizing SiC epitaxial curve-shaped doping distribution

A technology of doping distribution and epitaxial curves, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as large technical difficulties, achieve high promotional value, and improve the effect of design scope

Active Publication Date: 2020-04-17
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The flow rate of the dopant source into the reaction chamber is controlled by a mass flow meter (MFC). The existing MFC can only realize the linear change of the flow rate with time, so it is technically difficult to achieve a curved doping distribution.

Method used

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  • Method for realizing SiC epitaxial curve-shaped doping distribution
  • Method for realizing SiC epitaxial curve-shaped doping distribution
  • Method for realizing SiC epitaxial curve-shaped doping distribution

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Embodiment 1

[0047] This embodiment provides a method for realizing SiC epitaxial curved doping distribution, including the following steps:

[0048] step one, yes figure 1 The doping distribution curve given in is fitted piecewise linearly, the cumulative length of the doped area of ​​the curve is 1 μm, and the maximum doping concentration is 3E17 cm -3 , the lowest doping concentration is 2E16 cm -3 , which are respectively located on the surface of the epitaxial layer and at the position with a thickness of 0.7 μm, which are divided into 10 segments, each with a length of 0.1 μm. Select the epitaxy speed as 12μm / h, the corresponding Si / H 2 The ratio is 0.0625%. The selected C / Si ratio at the intake end is 0.85, and under this C / Si ratio condition, 3E17 cm -3 and 2E16 cm -3 The flow rates of n-type doping source nitrogen required for the epitaxial doping are 210 sccm and 14 sccm respectively. The doping concentration and the nitrogen flow are in a linear relationship, and the chang...

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Abstract

The invention discloses a method for realizing SiC epitaxial curve-shaped doping distribution. A chemical vapor deposition growth technology is used as a basis, and piecewise linear fitting is carriedout on the curve distribution; the carbon-silicon ratio of the growth source and the gas inlet end is fixed, linear change of the flow of the doping source along with time is achieved through a massflow meter, linear distribution of the doping concentration in each interval section is achieved, and finally distribution of the curve-shaped doping concentration in the whole epitaxial layer is achieved through multi-section linear doping concentration change combination. According to the method, the epitaxial wafer with special curve-shaped doping concentration distribution can be realized, thedesign range of the epitaxial structure of the device is expanded, and the popularization value is relatively high.

Description

technical field [0001] The invention discloses a method for realizing SiC epitaxy curve-shaped doping distribution, which belongs to the technical field of semiconductor materials. Background technique [0002] Silicon carbide (SiC) is an excellent material. Compared with traditional silicon materials, it has 10 times the breakdown field strength, 3 times the thermal conductivity, and 3 times the forbidden band width. Therefore, SiC material is an ideal material for manufacturing power devices. Unlike commonly used silicon devices, the design structure of SiC devices basically needs to be realized by epitaxy. In the multi-layer structure of the epitaxial structure design of SiC devices at the present stage, each epitaxial layer has a fixed doping concentration or a linear change. For some SiC devices, the curved doping distribution can achieve special design functions. [0003] Under the conditions of fixed growth source flow rate and gas-to-silicon ratio, the doping con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/04
CPCH01L21/0455
Inventor 李赟李忠辉赵志飞王翼周平
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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