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Display panel, preparation method thereof and display device

A display panel and area technology, applied in semiconductor/solid-state device manufacturing, instruments, semiconductor devices, etc., can solve the problems of complex structure, affecting the penetration rate of display panels, etc., to simplify the structure, reduce the channel length and area, The effect of increasing the aperture ratio

Pending Publication Date: 2020-04-17
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a display panel and its preparation method, display device, to solve the complex structure of the metal oxide thin film transistor device with ESL structure in the prior art, which affects the transmittance of the display panel, etc.

Method used

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  • Display panel, preparation method thereof and display device
  • Display panel, preparation method thereof and display device
  • Display panel, preparation method thereof and display device

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Embodiment Construction

[0045] The following describes the preferred embodiments of the present invention with reference to the accompanying drawings to prove that the present invention can be implemented. The embodiments of the invention can fully introduce the present invention to those skilled in the art, making its technical content clearer and easier to understand. The present invention can be embodied by many different forms of invention embodiments, and the protection scope of the present invention is not limited to the embodiments mentioned herein.

[0046] In the drawings, components with the same structure are denoted by the same numerals, and components with similar structures or functions are denoted by similar numerals. The size and thickness of each component shown in the drawings are arbitrarily shown, and the present invention does not limit the size and thickness of each component. In order to make the illustration clearer, the thickness of parts is appropriately exaggerated in some ...

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PUM

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Abstract

The invention provides a display panel, a preparation method thereof and a display device. The display panel comprises a base layer, a gate layer, an insulating layer and an active layer, wherein thegate layer is arranged on the base layer and is provided with a first gate layer and a second gate layer, and the second gate layer is arranged on the surface of the first gate layer; the insulating layer covers the gate layer and the base layer; the active layer is arranged on the surface, away from the gate layer, of the insulating layer; the active layer is provided with a first layer section and a second layer section connected to the first layer section; and the surface of the second layer section is higher than the surface of the first layer section.

Description

technical field [0001] The invention relates to the field of display devices, in particular to a display panel, a manufacturing method thereof, and a display device. Background technique [0002] Metal oxide thin film transistor (Metal oxide thin film transistor, MO-TFT), especially indium gallium zinc oxide (IGZO) TFT, due to its good uniformity, high mobility, low leakage current, suitable for large-area industrial preparation, etc. Advantages, widely used in the flat panel display industry. [0003] Existing MO-TFTs usually have BCE (Back Channel Etching, back channel etching) structure, ESL (EtchStop Layer, etch stop layer) structure and Top-Gate structure. Among them, the BCE structure has poor performance of TFT devices due to the source and drain metal etching acid solution will etch the active layer, resulting in poor performance of TFT devices, while the Top-gate structure has not been applied due to the complex structure and process, and high production costs. in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/77G02F1/1368
CPCH01L27/1214H01L27/1222H01L27/127G02F1/1368H01L29/42384H01L29/66969H01L29/7869H01L29/78696H01L29/66765H01L29/78678
Inventor 谢华飞
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD