A kind of light oxidation method of algaas epitaxial layer

A technology of epitaxial layer and ultraviolet light, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of complex process, long time consumption, fluctuation of oxidation rate, etc., and achieve the effect of reducing complexity and cost

Active Publication Date: 2020-07-03
VERTILITE CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method has the following problems: 1. The method is complex and time-consuming, and cannot be used as a standard calibration method for MOCVD epitaxial growth; 2. The wet oxidation process currently used not only requires an expensive high-temperature and high-humidity oxidation furnace, but also The process stability of the oxidation furnace itself is extremely high, and a slight change in the process conditions will cause severe fluctuations in the oxidation rate.

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  • A kind of light oxidation method of algaas epitaxial layer
  • A kind of light oxidation method of algaas epitaxial layer

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Embodiment 1

[0018] According to an embodiment of the present invention, as figure 1 As shown, a photo-oxidation method for an AlGaAs epitaxial layer mainly includes: an ultraviolet photocatalytic zone 1, an illumination device 2, a transmission epitaxial layer 3, an AlGaAs epitaxial layer 4, namely a target oxide layer, a GaAs substrate 5, and an infrared photocatalytic zone 6. Its steps include:

[0019] Step 1: On the GaAs substrate 5, grow an AlGaAs epitaxial layer 4 with a certain thickness, wherein the AlGaAs epitaxial layer 4 is an AlGaAs epitaxial layer containing a high Al composition, and the AlGaAs epitaxial layer 4 has a different oxidation levels. The AlGaAs epitaxial layer 4 is used as a target oxide layer, and a transmissive epitaxial layer 3 with a transmission wavelength less than 800 nm is grown on the AlGaAs epitaxial layer 4. The transmissive epitaxial layer 3 can protect the target oxide layer from natural oxidation. At the same time, in the photocatalytic reaction o...

Embodiment 2

[0027] According to another embodiment proposed by the present invention, such as figure 2 As shown, a method for photo-oxidizing an AlGaAs epitaxial layer mainly includes: a microscope objective lens 7, an illumination device 2, an AlGaAs epitaxial layer 4, that is, a target oxide layer, and a GaAs substrate 5. Wherein, D2 is the distance between the microscope objective lens 7 and the AlGaAs epitaxial layer 4 , and D1 is the thickness of the AlGaAs epitaxial layer 4 . Include the following steps:

[0028] Step 1: On the GaAs substrate 5, grow an AlGaAs epitaxial layer 4 with a thickness of D2.

[0029] Step 2: The light beam emitted by the illumination device 2 passes through the microscope objective lens 7 to irradiate the AlGaAs epitaxial layer 4, that is, the high-energy ultraviolet light and infrared light emitted by the illumination device 2 are focused on the AlGaAs epitaxial layer 4 through the microscope objective lens 7, thereby accelerating the AlGaAs epitaxial l...

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Abstract

The invention discloses a photo-oxidation method for an AlGaAs epitaxial layer, comprising: step S01: growing an AlGaAs epitaxial layer using a GaAs substrate; step S02: growing a transmission epitaxial layer on the AlGaAs epitaxial layer, etching the transmission epitaxial layer and The AlGaAs epitaxial layer forms a channel, and the channel is irradiated by an illumination device; or the AlGaAs epitaxial layer is directly irradiated by an illumination device through a microscope objective lens; Step S03: recording that the AlGaAs epitaxial layer changes from the first refractive index to the second Oxidation time of the birefringence index, observe and confirm the oxidation width or oxidation thickness of the oxidized region and calculate the oxidation rate. The light-accelerated oxidation method is adopted to rapidly oxidize the grown AlGaAs epitaxial layer in air at normal temperature, and at the same time, the oxidation rate of the AlGaAs epitaxial layer can be quickly determined.

Description

technical field [0001] The invention belongs to the technical field of vertical cavity surface lasers, and in particular relates to a photo-oxidation method of an AlGaAs epitaxial layer. Background technique [0002] Vertical-Cavity Surface-Emitting Laser (Vertical-Cavity Surface-Emitting Laser, referred to as VCSEL, also translated as Vertical Cavity Surface-Emitting Laser) is a semiconductor laser, the laser is emitted perpendicular to the surface, and the laser is emitted from the edge of the edge-emitting laser different. VCSEL is currently widely used in 3D sensing, optical communication and optical storage because of its advantages of low power consumption and easy integration. [0003] VCSELs have many advantages over edge-firing lasers. Edge-firing lasers need to be dissociated and coated after wafer-level manufacturing before they can be tested. If an edge-firing laser fails to function, either because of poor contact or poor quality of material growth, it will w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183G01N21/25
CPCG01N21/25H01S5/183
Inventor 李善文李辉杰颜虎
Owner VERTILITE CO LTD
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