Light emitting diode having plurality of light emitting cells

Abstract

A light emitting diode having a plurality of light emitting cells is provided. A light emitting diode, according to one embodiment, comprises: an ohmic reflection layer in ohmic contact with a secondconductivity type semiconductor layer; a lower insulating layer covering a light emitting unit and the ohmic reflection layer and having an opening exposing a first conductivity type semiconductor layer and the ohmic reflection layer; a connecting part arranged on the lower insulating layer and electrically connected with the light emitting unit to form a series matrix; a first pad metal layer electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected with the ohmic reflection layer; an upper insulating layer covering the connecting part, the first pad metal layer and the second pad metal layer and having an opening exposing upper surfaces of the first pad metal layer and the second pad metal layer; first and second protrudingpads connected to the first pad metal layer and the second pad metal layer, wherein the first protruding pad and the second protruding pad are provided with a first protruding pad outer side portionand a second protruding pad outer side portion respectively, and the connecting part is located on the inner side compared with the first protruding pad outer side portion and the second protruding pad outer side portion.

Description

[0001] This application is a divisional application of a patent application with an application date of November 2, 2017, an application number of 201780074372.0, and a patent application titled "Light Emitting Diode with Multiple Light Emitting Units". technical field [0002] The invention relates to a light emitting diode, in particular to a light emitting diode with a plurality of light emitting units. Background technique [0003] Generally, nitrides of group III elements such as gallium nitride (GaN) and aluminum nitride (AlN) have good thermal stability and have a direct transition type energy S band (band) structure, so they have recently been used as light sources in the visible and ultraviolet regions. The material is noticeable. In particular, blue light-emitting diodes and green light-emitting diodes using indium gallium nitride (InGaN) are used in large-scale natural color flat panel display devices, signal lights, indoor lighting, high-density light sources, au...

AI Technical Summary

Problems solved by technology

[0006] However, the connection part used to connect a plurality of light-emitting units in series is prone to disconnection due to the influence of the topography of the substrate formed by the light-emitting units, and reliability problems such as damage to the connection part due to infiltration of moisture from the outside are likely to occur.

[0007] And, in the case where a plurality of light emitting units are connected in series, the bump pad is electrically connected to one light emitting unit, so it is possible to limit the heat dissipation through the bump pad in the light emitting unit to which the bump pad is not electrically connected.

[0008] Furthermore, when a raised pad is arranged on the upper part of the light-emitting unit that is not electrically connected, a high potential difference may occur between the raised pad and the electrode of the light-emitting unit, which may cause original components such as insulation breakdown.

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