Preferred structure of film bulk acoustic resonator with high quality factor

A technology of thin-film bulk acoustic wave and high quality factor, applied in the direction of electrical components, impedance networks, etc., can solve problems such as damage to the quality factor of resonators, leakage of acoustic energy, etc., and achieve excellent quality factor, high quality factor, and improve the effect of quality factor

Active Publication Date: 2020-04-21
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, part of the acoustic energy in this technical solution will still leak to the external area through the air bridge structure, which will still greatly damage the quality factor of the resonator

Method used

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  • Preferred structure of film bulk acoustic resonator with high quality factor
  • Preferred structure of film bulk acoustic resonator with high quality factor
  • Preferred structure of film bulk acoustic resonator with high quality factor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Example 1. combine Figure 2A and Figure 2B , the basic structure of a thin film bulk acoustic resonator with a high quality factor proposed by the present invention includes a substrate 1 with a groove 2 on the upper surface, a bottom electrode layer 3 above the substrate 1, a piezoelectric layer 4, a strip There is a top electrode layer 5 with an air bridge structure 6, wherein the air bridge structure 6 is provided with an acoustic rebound structure 7 that can rebound the transverse sound wave and improve the quality factor of the film bulk acoustic resonator; The boundary in one direction of the structure 6 is located inside the groove 2, and the boundary in the other direction extends beyond the boundary of the groove 2; the acoustic rebound structure 7 is in close contact with the air bridge structure 6, forming an acoustic wave in the horizontal propagation direction. Impedance mismatch interface; the material of the acoustic rebound structure 7 is a thin film...

Embodiment 2

[0038] Example 2. combine Figure 3A and Figure 3B , a preferred structure of a high-quality factor thin-film bulk acoustic resonator proposed by the present invention (Scheme 1). The preferred structure (Scheme 1) includes a substrate 1 with a groove 2 on the upper surface, a bottom electrode layer 3 above the substrate 1, a piezoelectric layer 4, and a top electrode layer 5 with a special-shaped air bridge structure 12 , the special-shaped air bridge structure 12 is provided with an acoustic rebound structure 7 that can rebound the transverse sound wave and improve the quality factor of the film bulk acoustic resonator; the boundary of one direction of the special-shaped air bridge structure 12 is located at the Inside the groove 2, the boundary in another direction extends beyond the boundary of the groove 2; the acoustic rebound structure 7 is in close contact with the special-shaped air bridge structure 12, forming an acoustic impedance mismatch interface in the horizo...

Embodiment 3

[0039] Example 3. combine Figure 4A and Figure 4B , a preferred structure of a high quality factor film bulk acoustic resonator proposed by the present invention (Scheme 2). The preferred structure (Scheme 2) includes a substrate 1 with a groove 2 on the upper surface, a bottom electrode layer 3 above the substrate 1, a piezoelectric layer 4, and a top electrode layer 5 with an air bridge structure 6, the The air bridge structure 6 is provided with an acoustic rebound structure 7 that can rebound the transverse sound wave and improve the quality factor of the film bulk acoustic resonator; the boundary of one direction of the air bridge structure 6 is located within the groove 2 , the boundary in the other direction extends beyond the boundary of the groove 2; the acoustic rebound structure 7 is in close contact with the air bridge structure 6, forming an acoustic impedance mismatch interface in the horizontal propagation direction; the material of the acoustic rebound stru...

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PUM

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Abstract

The invention relates to a preferred structure of a film bulk acoustic resonator with a high quality factor. The structure comprises a substrate with a groove in the upper surface, a bottom electrodelayer located above the substrate and a piezoelectric layer, and is characterized by further comprising a top electrode layer with a special-shaped air bridge structure, and an acoustic springback structure capable of playing a role in springback of transverse acoustic waves is arranged in the air bridge structure; the sound springback structure is a convex or trapezoidal polyhedron opposite to abridge cavity of the special-shaped air bridge structure and is horizontally arranged in an area above the bridge cavity of the special-shaped air bridge structure. The top end surface of the sound springback structure is embedded and clung to a bridge cavity upward top surface groove of the special-shaped air bridge structure; an air gap is reserved between the bottom end face of the sound springback structure and the suspended structure in the area below the bridge cavity of the special-shaped air bridge structure, and the left side face and the right side face of the sound springback structure are embedded into and tightly attached to the grooves in the adjacent inner side faces of the bridge cavity supporting structure of the special-shaped air bridge structure respectively. The quality factor of the film bulk acoustic resonator can be remarkably improved.

Description

technical field [0001] The invention relates to a thin film bulk acoustic wave device, in particular to a preferred structure of a high quality factor thin film bulk acoustic wave resonator. Background technique [0002] With the development of wireless communication technology and smart phones, the RF front-end has higher and higher requirements on the performance indicators and integration of components. RF front-end filters, duplexers, and multiplexers based on thin film bulk acoustic wave devices have been widely used in smartphones, communication terminals, and In the communication base station, it will be applied in the communication equipment of the Internet of Vehicles, industrial control and other Internet of Things terminals in the future. In addition, oscillators based on thin film bulk acoustic wave devices are of great application value in high-speed serial data devices such as SATA hard drives, USB3.0 standard PC peripherals, C-type interfaces, and optical t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H9/02H03H9/13
CPCH03H9/02H03H9/02086H03H9/131H03H9/173H03H9/174H03H2009/02173
Inventor 赵洪元朱健
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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