Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
A technology of electroplating device and electrolyte, applied in the direction of current insulation device, electrolysis process, electrolysis components, etc.
Active Publication Date: 2020-05-01
LAM RES CORP
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Due in part to the typically larger feature sizes (compared to front-end-of-the-line (FEOL) interconnects) and high aspect ratios, these technologies present themselves with very large challenges
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[0030] In this application, the terms "semiconductor substrate", "wafer", "substrate", "wafer substrate" and "partially fabricated integrated circuit" are used interchangeably. Those of ordinary skill in the art will appreciate that the term "partially fabricated integrated circuit" may refer to a silicon wafer during any of the many stages of integrated circuit fabrication thereon. Wafers or substrates used in the semiconductor device industry are typically 200 mm, or 300 mm, or 450 mm in diameter. Furthermore, the terms "electrolyte", "plating bath", "bath" and "bath" are used interchangeably. The detailed description below assumes that the embodiments are implemented on a wafer. However, embodiments are not so limited. Workpieces can be of various shapes, sizes and materials. In addition to semiconductor wafers, other workpieces that may utilize embodiments of the present disclosure include various items such as printed circuit boards, magnetic recording media, magnetic ...
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Abstract
Various embodiments herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. The apparatus includes an ionically resistive element that separates the platingchamber into a cross flow manifold (above the ionically resistive element) and an ionically resistive element manifold (below the ionically resistive element). Electrolyte is delivered to the cross flow manifold, where it shears over the surface of the substrate, and to the ionically resistive element manifold, where it passes through through-holes in the ionically resistive element to impinge upon the substrate as it enters the cross flow manifold. In certain embodiments, the flow of electrolyte into the cross flow manifold (e.g., through a side inlet) and the flow of electrolyte into the ionically resistive element manifold are actively controlled, e.g., using a three-way valve. In these or other cases, the ionically resistive element may include electrolyte jets.
Description
[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Patent Application Serial No. 15 / 707,805, filed September 18, 2017, and entitled "METHODS AND APPARATUS FORCONTROLLING DELIVERY OF CROSS FLOWING AND IMPINGING ELECTROLYTE DURING ELECTROPLATING," the entire contents of which are hereby incorporated by reference and incorporated herein for all purposes. Background technique [0003] Embodiments of the present disclosure relate to methods and apparatus for controlling electrolyte fluid dynamics during electroplating. More specifically, the methods and apparatus described in this invention are particularly useful for plating metals on semiconductor wafer substrates, e.g., by small micro-raised features (e.g., copper, nickel, tin and tin alloy solders) and through resist plating for copper through-silicon via (TSV) features. [0004] Electrochemical deposition is now poised to meet commercial demands for sophisticated packaging an...
Claims
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IPC IPC(8): C25D17/00C25D5/08C25D17/06C25D21/12C25D17/02C25D7/12H01L21/288C25B9/19
CPCH01L24/742C25D17/008C25D21/12H01L24/13H01L2224/13111H01L2224/13147H01L2224/13155H01L2224/94C25D5/08C25D17/001H01L2224/11462H01L24/11H01L21/76898H01L21/2885C25D7/12H01L2924/00014H01L2924/014H01L2224/11C25D17/002C25D5/028
Inventor 斯蒂芬·J·巴尼克二世亚伦·贝尔克布莱恩·L·巴卡柳罗伯特·拉什
Owner LAM RES CORP