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Functional film and preparation method thereof, and flexible pressure sensor and preparation method thereof

A pressure sensor and film technology, applied in the field of sensors, can solve the problems of poor sealing of flexible pressure sensors, discount of contact electrification effect, high equipment dependence, etc., and achieve the effect of large change amount, high dielectric constant and simple process

Active Publication Date: 2020-05-08
INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, traditional self-generating flexible pressure sensors mainly rely on the role of microstructures, and the preparation of microstructures mostly uses MEMS processing technology, involving a series of complex processes such as corrosion, bonding, photolithography, oxidation, diffusion, and sputtering. Although it can achieve precise microstructure and batch production, it is highly dependent on equipment, technically difficult and costly
In addition, the flexible pressure sensor obtained by the current conventional packaging technology such as 3M tape is not well sealed, and water vapor, body fluid, etc. are easy to enter the flexible pressure sensor, making its contact electrification effect greatly reduced in a humid environment

Method used

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  • Functional film and preparation method thereof, and flexible pressure sensor and preparation method thereof
  • Functional film and preparation method thereof, and flexible pressure sensor and preparation method thereof
  • Functional film and preparation method thereof, and flexible pressure sensor and preparation method thereof

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preparation example Construction

[0035] Such as figure 1 Shown, the preparation method of the functional thin film provided by the invention comprises:

[0036] (1) providing the first flexible thin film 10 and the suspension containing ferroelectric material precursor;

[0037] (2) forming the suspension on a surface of the first flexible film 10 to form a precursor layer 30 on the surface;

[0038] (3) Laser is used to irradiate the surface of the first flexible film 10 with the precursor layer 30, so that the surface of the first flexible film 10 forms a graphene microstructure 110, and the ferroelectric material precursor The body is transformed into ferroelectric material particles 111 and embedded in the interior and / or surface of the graphene microstructure 110 to form a composite microstructure 11 to obtain a functional film, wherein the surface of the composite microstructure 11 is lower than the first A groove 12 extending from the surface of the first flexible film 10 to the composite microstruct...

Embodiment 1

[0085] Dissolve butyl titanate and glacial acetic acid in isopropanol (the molar ratio of butyl titanate, isopropanol and glacial acetic acid is 1:6:3), and stir evenly to obtain mixed solution A. Weigh an equimolar amount of barium acetate, dissolve it in distilled water, stir to dissolve it completely, and obtain solution B. The solution B was mixed with the mixed solution A, stirred evenly and left to stand for 10 hours, then vacuum-dried at 150° C. for 5 hours to obtain a preform, which was washed with ethanol three times to obtain a barium titanate precursor. The barium titanate precursor was dispersed with isopropanol to obtain a barium titanate precursor suspension with a concentration of 10%.

[0086] Select the material as the first flexible film of PDMS, adopt O 2 Plasma treatment for 1 min to generate -OH, -COOH and other functional groups on the surface. Then, the above-mentioned barium titanate precursor suspension was spin-coated on the surface, and then dried ...

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Abstract

The invention relates to a preparation method of a functional film. The method comprises the following steps: forming a precursor layer of a ferroelectric material on one surface of a first flexible film, irradiating the surface by adopting laser; wherein the surface of the first flexible film forms a composite microstructure, the composite microstructure comprises a graphene microstructure and ferroelectric material particles embedded inside and / or on the surface of the graphene microstructure, the surface of the composite microstructure is lower than the surface of the first flexible film, and a groove extending from the surface of the first flexible film to the composite microstructure is formed. The invention also provides the functional film obtained by the preparation method, a flexible pressure sensor based on the preparation method and a preparation method of the flexible pressure sensor. The preparation method of the functional film is simple, the output performance is excellent, and the flexible pressure sensor prepared based on the functional film has the performance advantages of being good in sealing performance, high in sensitivity and the like.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a functional thin film and a preparation method thereof, a flexible pressure sensor and a preparation method thereof. Background technique [0002] At present, smart wearable sensors are powered by various chemical energy batteries, which need to be replaced regularly, and are difficult to recycle, which will pollute the environment. The self-generating flexible pressure sensor can convert the mechanical energy of the organism into electrical energy, so as to provide almost life-long energy for the flexible pressure sensor. [0003] However, traditional self-generating flexible pressure sensors mainly rely on the role of microstructures, and the preparation of microstructures mostly uses MEMS processing technology, involving a series of complex processes such as corrosion, bonding, photolithography, oxidation, diffusion, and sputtering. Although the process can achieve precise m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/16B82Y30/00
CPCG01L1/16B82Y30/00
Inventor 冯雪杜琦峰陈颖
Owner INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG
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