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A crimping type sic power module packaging structure

A power module and packaging structure technology, which is applied in semiconductor/solid-state device components, semiconductor devices, electrical components, etc., can solve the problem of poor electrical and thermal characteristics, inability to fully utilize the performance of high-voltage silicon carbide devices, and difficulty in improving power density, etc. question

Active Publication Date: 2021-07-30
SHENZHEN BASIC SEMICON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the current crimping packaging structure is mainly suitable for silicon power devices with a slow turn-off speed for current, while the packaging for silicon carbide devices has poor electrical and thermal characteristics, and it is difficult to ensure the reliability of silicon carbide devices. The power density is difficult to increase, and the excellent performance of high-voltage silicon carbide devices cannot be fully utilized

Method used

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  • A crimping type sic power module packaging structure
  • A crimping type sic power module packaging structure
  • A crimping type sic power module packaging structure

Examples

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Embodiment Construction

[0027] Embodiments of the present invention will be described in detail below. It should be emphasized that the following description is only exemplary and not intended to limit the scope of the invention and its application.

[0028] It should be noted that when an element is referred to as being “fixed” or “disposed on” another element, it may be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element. In addition, connection may be for both a fixed function and a circuit / signal communication function.

[0029] It is to be understood that the terms "length", "width", "top", "bottom", "front", "rear", "left", "right", "vertical", "horizontal", "top" , "bottom", "inner", "outer" and other indicated orientations or positional relationships are based on the orientations or positional relationships sh...

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Abstract

A crimp-type SiC power module packaging structure, comprising an insulating case, a main terminal, and a circuit board with a chip mounted on the surface, the insulating case is a structure with an opening at the bottom, and an accommodating cavity is arranged inside the insulating case, the The circuit board is crimped and installed at the lower opening of the insulating housing, and the side of the circuit board on which the chip is installed faces the inside of the insulating housing, and the side of the insulating housing is formed with a main terminal for mounting The main terminal installation hole is provided, and the main terminal is installed on the insulating housing through the main terminal installation hole and is electrically connected with the circuit board in the insulating housing. The crimping type packaging structure of the present invention can greatly enhance the electrical characteristics, thermal characteristics, heat dissipation capacity and flow capacity of the SiC power module, effectively improve the overall reliability of the module, reduce the size of the module, and increase the power density.

Description

technical field [0001] The invention relates to a semiconductor power electronic device, in particular to a crimping type SiC power module packaging structure. Background technique [0002] At present, power electronic conversion devices for new energy vehicles mainly use silicon (Si) semiconductor power electronic devices. With the continuous improvement of market demand, the design of new energy vehicles is becoming more and more refined, and the requirements for power density and efficiency are also getting higher and higher. The physical characteristics of silicon material devices can no longer meet the application requirements of high frequency and high efficiency. In recent years, in the field of new energy vehicles, silicon carbide (SiC) semiconductor power devices have developed rapidly, and have many advantages over the currently widely used silicon semiconductor (Si) power devices, such as: high operating frequency, low loss, high operating temperature and high p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/04H01L23/495H01L23/367H01L23/08H01L23/49
CPCH01L23/04H01L23/08H01L23/3675H01L23/49H01L23/4952H01L23/49568
Inventor 杨柳张振中孙军和巍巍
Owner SHENZHEN BASIC SEMICON LTD
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