Ion implantation device

Abstract

The invention discloses an ion implantation device which comprises a rotating target disc and a broadband ion beam. The rotating target disc is provided with an annular injection area coinciding withthe center of the rotating target disc, a plurality of wafer loading areas are evenly arranged in the annular injection area, the width of the broadband ion beam is a, the radius of the annular injection area is b, and a is larger than or equal to b. The ion implantation device has the advantages that the temperature rise on the surface of a wafer in a large-dose injection and high-productivity application scene can be reduced, and the injection process requirements of some special materials sensitive to temperature are met.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit, in particular to an ion implantation device. Background technique [0002] The current common ion implantation modes mainly include full electrical scanning implantation, electrical scanning implantation and combined mechanical scanning implantation. Full electrical scan injection as attached figure 1 As shown, the ion beam is scanned in two directions driven by two sets of scanning electrodes X and Y, which are X scanning and Y scanning respectively, one of which has a high scanning frequency (such as X scanning), and the other has a low scanning frequency (such as Y scanning). This results in an implant covering the entire wafer surface. Electronic scanning injection and mechanical scanning combined injection are attached figure 2 As shown, the ion beam is scanned at high speed driven by a set of X scanning electrodes to form a scanning broadband beam covering more than the diameter of ...

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Problems solved by technology

[0003] Existing ion implantation devices have been applied in different doping processes in the manufacture of silicon devices to meet the application requirements, but they encounter difficulties in the wafer implantation of some special materials. The main reason is that the power is too concentrated when the ion beam is implanted into the wafer. It is easy to cause the surface temperature of the wafer to be too high, especially for some temperature-sensitive semiconductor materials, which need to strictly control the temperature of the wafer surface, which cannot meet the demand in the application scenarios of high-dose injection and high production capacity.

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