Semiconductor power device and power processing assembly for semiconductor power device

A power device and semiconductor technology, applied in the field of semiconductor electronic devices, can solve the problems of increasing the error of temperature detection results, unfavorable precise control of chip 22' working temperature, etc.

Active Publication Date: 2022-01-21
GREE ELECTRIC APPLIANCES INC +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the encapsulant can reduce the risk of chip 22' short-circuit arc breakdown and damage the temperature sensor 23', it will increase the error between the temperature detection result of the temperature sensor 23' and the actual working temperature of the selected chip 22', It is not conducive to precise control of the working temperature of the chip 22'

Method used

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  • Semiconductor power device and power processing assembly for semiconductor power device
  • Semiconductor power device and power processing assembly for semiconductor power device
  • Semiconductor power device and power processing assembly for semiconductor power device

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Embodiment Construction

[0014] The present invention will be further described below in conjunction with accompanying drawing.

[0015] figure 2 and image 3 The structure of the semiconductor power device of the embodiment of the present invention is shown. like figure 2 and image 3 As shown, the semiconductor power device 100 can be an IGCT device (English full name is Integrated Gate-Commutated Thyristor, Chinese full name is Integrated Gate-Commutated Thyristor) or an IGBT device (English full name is Insulated Gate Bipolar Transistor, Chinese full name is Insulated Gate Bipolar Transistor). polar transistor), etc. The semiconductor power device 100 includes a power processing assembly, a heat-conducting bottom plate 30 for carrying the power processing assembly, and a housing 40 buckled on the heat-conducting bottom plate 30 to accommodate the power processing assembly together with it, and is arranged between the housing 40 and the heat-conducting bottom plate 30 A potting compound (not...

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PUM

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Abstract

The present invention relates to a semiconductor power device and a power processing assembly for the semiconductor power device, wherein the power processing assembly includes an insulating substrate; a plurality of chips arranged on the insulating substrate; A sensor body located under the selected chip, and an electrical connector connected to the sensor body and passing through the insulating substrate. The power processing component can reduce the risk of damage to the temperature sensor due to short-circuit arc breakdown, and at the same time solve the problem of a large error between the temperature detection result of the temperature sensor and the actual operating temperature of the selected chip, which is beneficial to the operating temperature of the chip. Precise control.

Description

technical field [0001] The present invention relates to a semiconductor electronic device, in particular to a power processing assembly for a semiconductor power device and a semiconductor power device including the power processing assembly. Background technique [0002] With the continuous development and progress of science and technology, semiconductor power devices are widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment and other fields. like figure 1 As shown, the power processing assembly is similar to the circuit board structure with components, and is the core unit to realize the basic functions of the semiconductor power device 100'. The performance of the power processing assembly is closely related to the operating temperature of its chip 22', and its operating temperature is slightly Variations may cause a sudden drop in the performance of power processing components, so it is particularly important to precisely contro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L23/34H01L23/367H01L23/15H01L25/07
CPCH01L25/072H01L22/30H01L23/34H01L23/3672H01L23/15H01L2224/73265H01L2224/48091H01L2924/00014
Inventor 马浩华史波曹俊敖利波
Owner GREE ELECTRIC APPLIANCES INC
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