Unlock instant, AI-driven research and patent intelligence for your innovation.

A perovskite photodetector based on active layer optimization and its preparation method

A photodetector, perovskite technology, applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc. problems, to achieve the effect of improving uniformity and flatness, improving environmental stability, and reducing the probability of compounding

Active Publication Date: 2022-08-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, although perovskite has excellent photoelectric properties, its perovskite structure is extremely unstable. Generally, the prepared perovskite polycrystalline film has poor uniformity and large particle size differences, resulting in a large density of grain boundary defects. Not only will it increase the probability of carrier recombination and reduce the detection efficiency of photodetectors, but also the grain boundaries will easily capture water and gas molecules, which will accelerate the decomposition of perovskite grains and further affect the stability of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A perovskite photodetector based on active layer optimization and its preparation method
  • A perovskite photodetector based on active layer optimization and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Example 1: Control group

[0033] Clean the substrate composed of a transparent substrate 1 and a transparent conductive ITO anode 2 with a surface roughness less than 1 nm, and dry it with nitrogen after cleaning; spin-coat TAPC solution (2500rpm, 40s) on the surface of the transparent conductive ITO anode 2 (2500rpm, 40s), and Conduct thermal annealing treatment (120°C, 20min) to prepare hole transport layer 3; spin-coat CH on hole transport layer 3 3 NH 3 PbI 3 Solution (4000rpm, 25s), 300μL of chlorobenzene was added dropwise as anti-solvent when rotating for 9s, and thermal annealing treatment (110°C, 20min) was performed to prepare perovskite photoactive layer 4; spin coating on the surface of perovskite photoactive layer 4 PC 61 BM solution (4000rpm, 40s), and thermal annealing treatment (110℃, 20min) to prepare hole transport layer 3; Evaporate cathode buffer layer 6 on hole transport layer 3: Bphen (1nm); On cathode buffer layer 6 Evaporated metal cathode 7...

Embodiment 2

[0035] Clean the substrate composed of a transparent substrate 1 and a transparent conductive ITO anode 2 with a surface roughness less than 1 nm, and dry it with nitrogen after cleaning; spin-coat TAPC solution (2500rpm, 40s) on the surface of the transparent conductive ITO anode 2 (2500rpm, 40s), and Conduct thermal annealing treatment (120 °C, 20 min) to prepare hole transport layer 3; spin-coat CH doped with 0.5 mg / ml PFN-Br on hole transport layer 3 3 NH 3 PbI 3 Solution (4000rpm, 25s), 300 μL of chlorobenzene was added dropwise as an anti-solvent while rotating for 9s, and thermal annealing treatment (110°C, 20min) was performed to prepare perovskite photoactive layer 4; spin on the surface of perovskite photoactive layer 4. Coated PC 61BM solution (4000rpm, 40s), and thermal annealing treatment (110℃, 20min) to prepare hole transport layer 3; Evaporate cathode buffer layer 6 on hole transport layer 3: Bphen (1nm); On cathode buffer layer 6 Evaporated metal cathode 7:...

Embodiment 3

[0037] Clean the substrate composed of a transparent substrate 1 and a transparent conductive ITO anode 2 with a surface roughness less than 1 nm, and dry it with nitrogen after cleaning; spin-coat TAPC solution (2500rpm, 40s) on the surface of the transparent conductive ITO anode 2 (2500rpm, 40s), and Conduct thermal annealing treatment (120 °C, 20 min) to prepare hole transport layer 3; spin-coat CH doped with 1 mg / ml PFN-Br on hole transport layer 3 3 NH 3 PbI 3 Solution (4000rpm, 25s), 300μL of chlorobenzene was added dropwise as anti-solvent when rotating for 9s, and thermal annealing treatment (110°C, 20min) was performed to prepare perovskite photoactive layer 4; spin coating on the surface of perovskite photoactive layer 4 PC 61 BM solution (4000rpm, 40s), and thermal annealing treatment (110℃, 20min) to prepare hole transport layer 3; Evaporate cathode buffer layer 6 on hole transport layer 3: Bphen (1nm); On cathode buffer layer 6 Evaporated metal cathode 7: Ag (1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a perovskite photodetector optimized based on an active layer and a preparation method thereof. The photodetector adopts a positive structure and consists of a substrate, a transparent conductive ITO anode, a hole transport layer, and a perovskite photoactive layer, electron transport layer, cathode buffer layer, and metal cathode from bottom to top, the perovskite photoactive layer is prepared by spin coating of perovskite precursor solution, which is polymerized in the perovskite precursor solution The content of PFN-Br is 0.5mg / ml or 1mg / ml or 2mg / ml or 5mg / ml. In the invention, the hydrophilic functional groups of the polymer PFN-Br are closely combined with the perovskite crystal grains to form a polymer grain boundary network, passivate the defects between the crystal grains, improve the carrier transport capability, and further improve the optical detection of the device At the same time, the hydrophobic properties of the polymer main chain isolate the erosion of water and oxygen on the perovskite grains and improve the environmental stability of the device.

Description

technical field [0001] The invention belongs to the field of perovskite photovoltaic devices or perovskite photodetectors, in particular to a perovskite photodetector optimized based on an active layer. Background technique [0002] As a medium, light can transmit both energy and information. In today's high-speed information age, the role of light in information transmission is becoming more and more important. Photodetectors are devices that convert optical signals into electrical signals to facilitate information processing, analysis, and storage. They are the core components of optoelectronic systems. They are widely used in image sensing, optical communication, environmental monitoring, and chemical and biological detection. widely used. The material of the photoactive layer that plays the role of light conversion has a decisive role in the performance of the photodetector. Perovskite materials are innovative materials in the field of photovoltaics, with high carrier...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/20Y02E10/549
Inventor 黄钰张大勇潘博闻于军胜
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA