High-power microwave generation device and method

A microwave generation device and high-power microwave technology, which is applied in the field of high-power microwave generation devices, can solve the problems of large system volume, high cost, and heavy weight, and achieve the effects of large volume, low cost, and low voltage and current

Pending Publication Date: 2020-05-22
CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems of large volume, heavy weight and high cost of the system in high-power microwave synth

Method used

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  • High-power microwave generation device and method
  • High-power microwave generation device and method
  • High-power microwave generation device and method

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Embodiment Construction

[0039] Through the following examples, combined with the attached Figure 1-4 , the technical solution of the present invention will be further specifically described.

[0040] as attached figure 1 As shown, a high-power microwave generating device, the high-power microwave generating device includes a signal source, a phase flip switch, a first-stage solid-state amplifier, a power divider, first to fourth two-stage solid-state amplifiers, first to fourth shifters Phaser, first to fourth adjustable attenuator, first to fourth permanent magnet focusing klystron, first to fourth directional coupler, first to fourth circulator, synthesizer, pulse compression device, pulse modulator and centralized controller; the first to fourth second-stage solid-state amplifiers, phase shifters, adjustable attenuators, permanent magnet focusing klystrons, directional couplers and circulators all adopt the same configuration.

[0041] The signal source is connected to the phase flip switch; the ...

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Abstract

The invention provides a high-power microwave generation device and method. The generation device comprises an integrated controller, a signal source, a primary solid-state amplifier, a power divider,a plurality of identical secondary solid-state amplifiers, a plurality of identical klystrons, a synthesizer and a pulse compression device; and the centralized controller is connected with a signalsource, the signal source is connected with the primary solid-state amplifier, the primary solid-state amplifier is connected with the power divider, the power divider is connected with the pluralityof same secondary solid-state amplifiers, the plurality of secondary solid-state amplifiers are respectively connected with the corresponding klystrons, the klystrons are respectively connected with the synthesizer, the synthesizer is connected with the pulse compression device, and the pulse compression device further amplifies a synthesized radio frequency signal. The implementation method is simple, the cost is low, the reliability is high, the size is small, and certain maneuvering performance is achieved; and meanwhile, the high-power microwave generation device can also be used as an integrally designed transmitter of a high-power radar, a jammer, a microwave weapon and the like.

Description

technical field [0001] The invention relates to the technical field of high-power microwaves, in particular to a high-power microwave generating device and method. Background technique [0002] High-power microwave has important application value in the fields of national defense, energy, aerospace and high-energy physics. The application requirements of high-power microwaves determine that improving the microwave output capability is an important development direction of high-power microwave systems. Due to the limitations of the physical generation mechanism of high-power microwaves and the device process structure, various microwave sources have their power limitations. In order to break through the limitation of the output power of a single device, it is necessary to carry out research on power combining technology. Especially in terms of military applications, studies by the United States, Russia and other countries have shown that the technological integration among ...

Claims

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Application Information

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IPC IPC(8): H01J23/36H01J25/10H03K3/02
CPCH01J23/36H01J25/10H03K3/02
Inventor 杨明杨景红刘超王登峰汤长龄何秀华
Owner CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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