Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Modified gold-tin electrode, LED chip and manufacturing method thereof

An LED chip and electrode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of increased working voltage, poor stability, short service life, etc., to reduce the influence of working voltage, improve adhesion, and solve The effect of increased operating voltage

Pending Publication Date: 2020-05-29
XIAMEN QIANZHAO SEMICON TECH CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a modified gold-tin electrode, LED chip and preparation method thereof, to solve the problems of increased working voltage, poor stability and short service life caused by the gold-tin electrode of the LED chip in the prior art. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Modified gold-tin electrode, LED chip and manufacturing method thereof
  • Modified gold-tin electrode, LED chip and manufacturing method thereof
  • Modified gold-tin electrode, LED chip and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] In order to make the content of the present invention clearer, the content of the present invention will be further described below in conjunction with the accompanying drawings. The invention is not limited to this specific example. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0057] Such as figure 1 As shown, a modified gold-tin electrode 1 includes:

[0058] Current spreading layer 1-1;

[0059] The voltage stabilizing layer 1-2 and the gold-tin alloy layer 1-3 stacked in sequence on the surface of the current spreading layer 1-1; the voltage stabilizing layer 1-2 is used to stabilize the voltage of the current spreading layer 1-1, and the voltage stabilizing layer 1- The constituent materials of 2 are in solid state fusion with the constituent materials of the current spreading layer 1-1 and the co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a modified gold-tin electrode, an LED chip and a manufacturing method thereof. A voltage stabilization layer and a gold-tin alloy layer are sequentially stacked on a surface ofa current expansion layer so that the modified gold-tin electrode is formed, and an influence of the gold-tin electrode on a working voltage of the LED chip can be reduced. An N-type electrode and aP-type electrode adopt the modified gold-tin electrode, and a design of an expansion electrode and an insulation protection layer in the chip is combined so that the N-type electrode is laminated on the insulation protection layer, covers a third channel and is electrically connected with a first expansion electrode; and the P-type electrode is laminated on the insulating protection layer, coversa second channel and is electrically connected with a second extended electrode. The influence of the gold-tin electrode on the working voltage of the LED chip can be reduced while internal quantum efficiency of the LED chip is guaranteed; and adhesion of the electrode is improved, the electrode is prevented from being stripped from an epitaxial laminated layer, and a service life of the LED chipis further prolonged.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to a modified gold-tin electrode, an LED chip and a preparation method thereof. Background technique [0002] With the rapid development of LED technology and the gradual improvement of LED light efficiency, the application of LED is becoming more and more extensive, and people are paying more and more attention to the development prospect of LED in the lighting market. LED chip, as the core component of LED lamp, its function is to convert electrical energy into light energy, specifically, it includes epitaxial wafers and N-type electrodes and P-type electrodes respectively arranged on the epitaxial wafers. The epitaxial wafer includes a P-type semiconductor layer, an N-type semiconductor layer, and an active layer between the N-type semiconductor layer and the P-type semiconductor layer. When a current passes through the LED chip, the holes in the P-type semiconductor and The...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/40
CPCH01L33/40H01L2933/0016
Inventor 黄瑄李俊贤刘英策邬新根周弘毅
Owner XIAMEN QIANZHAO SEMICON TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com