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Alloy quantum dots capable of remarkably inhibiting auger recombination, preparation and applications thereof

An Auger recombination and quantum dot technology, which is applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of difficult and efficient suppression of Auger recombination, and achieve the effect of inter-band Auger recombination suppression and hot carrier lifetime extension.

Active Publication Date: 2020-06-02
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0006] The object of the present invention is to provide an alloy layer quantum dot capable of significantly suppressing Auger recombination and a preparation method thereof, so as to solve the above-mentioned technical problem that Auger recombination is difficult to suppress efficiently

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  • Alloy quantum dots capable of remarkably inhibiting auger recombination, preparation and applications thereof
  • Alloy quantum dots capable of remarkably inhibiting auger recombination, preparation and applications thereof
  • Alloy quantum dots capable of remarkably inhibiting auger recombination, preparation and applications thereof

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Embodiment

[0020] The alloy layer quantum dots and the preparation method thereof, which significantly inhibit the Auger recombination described in this embodiment, the preparation method comprises the following steps:

[0021] A hexane solution of 0.3 μmol CdSe QDs (CdSe core with a diameter of 4.5 nm) was mixed with 1 mL TOP and 4 mL ODE, and the n-hexane was removed by pumping at 50 °C. Then the temperature of the solution was raised rapidly to 300°C, and at the same time, the pre-prepared Zn(OA) was added to the mixture 2 solution. Then 2mL 2M TOP-Se, 2mL 0.5M Cd(OA) 2 and 4 mL of ODE were continuously injected into the reaction mixture at a rate of 3 mL per hour. During synthesis, 2mL Zn(OA) 2 The solution was added to the reaction mixture every 40 minutes. The alloy QDs obtained by the reaction were purified three times and dispersed in toluene to obtain the finished alloy layer QDs.

[0022] Whether the alloy layer QDs prepared by us can effectively and significantly suppress...

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Abstract

The invention particularly discloses alloy layer quantum dots (QDs) capable of remarkably inhibiting auger recombination, and a preparation method thereof. According to the invention, Cd, Zn and Se precursors are continuously injected in a synthesis process, and the CdSe / Cd1-xZnxSe alloy layer QDs are synthesized by utilizing different reaction activities and different atom diffusivity of atoms; the x value of the alloy layer QDs is almost continuously distributed from the CdSe core to the ZnSe shell, so that the in-band auger recombination and the inter-band auger recombination are remarkablyinhibited; by adopting n-doped (electron-doped) alloy QDs, auger recombination of native trions is completely inhibited, so that recombination is only carried out in a radiation mode; and various excellent optical properties represented by the alloy layer QDs show that the alloy layer QDs have great advantages and development potential when applied to low-threshold lasers, light emitting diodes (LEDs) and non-scintillation light sources.

Description

technical field [0001] The patent of the invention belongs to the technical field of inhibiting QDs Auger recombination, and in particular relates to an alloy layer quantum dot (QDs) which significantly inhibits Auger recombination and a preparation method thereof. Background technique [0002] In semiconductors, Auger recombination is the non-radiative decay process in which the recombination energy of electrons (e) and holes (h) is not released in the form of photons, but instead transfers energy to a third charge. In colloidal quantum dots (QDs), due to its strong quantum confinement effect, the Auger recombination process is more significant, which leads to biexciton lifetimes in the order of several to hundreds of ps in classical QDs. Because QDs will inevitably have multiple carrier states in the application, its extremely fast Auger recombination process greatly hinders the efficient application of QDs in photovoltaic and optoelectronic devices, such as QDs lasers (de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88
CPCC09K11/88
Inventor 吴凯丰王俊慧丁韬
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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