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Constant power cycle test circuit and method based on power loss linear control

A constant power, cyclic test technology, applied in the direction of measuring electricity, measuring electrical variables, bipolar transistor testing, etc., to simplify the control method and eliminate the effect of junction temperature that cannot be accurately controlled

Active Publication Date: 2020-06-05
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The disadvantage of the above scheme is that since the static output characteristic curve of the bipolar power device usually has two intervals, the positive temperature coefficient and the negative temperature coefficient, when selecting the load current in different positive and negative temperature coefficient intervals to test the power device During the test, the turn-on power loss of the device under test will change in a completely opposite trend within a specific second time, and the resulting thermal-mechanical stress will also change with the change of the turn-on power trend
The disadvantage of this method is that an additional small current injection circuit is required, and the temperature sensitive parameter method based on small current needs to be corrected under different temperature conditions

Method used

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  • Constant power cycle test circuit and method based on power loss linear control
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  • Constant power cycle test circuit and method based on power loss linear control

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Embodiment 1

[0044] figure 2 A schematic diagram of the composition of the constant power cycle test circuit of the first embodiment is shown. Such as figure 2 As shown, the circuit mainly includes a constant current source I dc , the first semiconductor power device to be tested S1, the second semiconductor power device to be tested S2, the first drive unit QD1, the second drive unit QD2, the first temperature control unit T1, the second temperature control unit T2, the voltage measurement and storage unit UM. in:

[0045] The input terminal and the output terminal of the first semiconductor power device S1 to be tested are respectively connected with the constant current source I dc The positive pole and negative pole connection of the second semiconductor power device S2 to be tested are respectively connected to the input terminal and the output terminal of the constant current source I dc The positive and negative terminals are connected to a constant current source from I dc ...

Embodiment 2

[0053] Such as image 3 As shown, this embodiment also provides a constant power cycle test method based on the above constant power cycle test circuit, the method includes the following steps:

[0054] S10, establishing a time-junction-temperature single-relationship model of the semiconductor power device to be tested.

[0055] Determine the static output characteristic curves of the tested semiconductor power devices S1 and S2 under different temperature conditions according to the data sheet of the device under test or use a static parameter testing instrument, and extract the intersection position of the positive temperature coefficient area and the negative temperature coefficient area, and at the same time Record the collector intersection current value Icex corresponding to the intersection of the positive temperature coefficient area and the negative temperature coefficient area and the collector voltage Vcex corresponding to the Icex current. Then, according to the ...

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Abstract

The invention discloses a constant power cycle test circuit and method based on power loss linear control. The constant power cycle test circuit comprises a constant current source, a first to-be-tested semiconductor power device, a second to-be-tested semiconductor power device, a first driving unit, a second driving unit, a first temperature control unit, a second temperature control unit and avoltage measurement and storage unit. The invention also provides a test method based on the constant power cycle test circuit. According to the constant power cycle test circuit and the test method,the junction temperature swing of the to-be-tested power device only forms a single direct proportion relationship with the conduction time, the control method of the power cycle test is simplified, and the problem that the junction temperature of the to-be-tested power device cannot be accurately controlled in the long-term power cycle test is eliminated.

Description

technical field [0001] The invention relates to the technical field of testing semiconductor power devices, in particular to a constant power cycle test circuit and method based on power loss linear control. Background technique [0002] Semiconductor power devices represented by insulated gate bipolar transistors (Insulate-Gate Bipolar Transistor—IGBT) are widely used in power conversion fields such as rail transit, direct current transmission, new energy power generation, and electric vehicles. Since semiconductor power devices are the most core components in power conversion devices, their reliability is particularly important in the design and application of power conversion devices. Power cycle testing is the most widely used method to investigate the reliability of power device packages. In the standard power cycle test method, the semiconductor chip inside the power device works alternately in the on / off state at a very low switching frequency. The conduction loss o...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2608
Inventor 刘国友李道会罗皓泽齐放王彦刚李孔竞吴义伯戴小平
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD