Formation of sio based on wafer bonding 2 Waveguide realizes mode conversion method and mode converter

Abstract

The present invention discloses the formation of SiO based on wafer bonding 2 A method for waveguide to achieve mode conversion and a mode converter, including: preparing a silicon substrate and an SOI wafer, making grooves on the silicon substrate; making the first SiO 2 The waveguide layer is used to fill the groove; the top silicon layer of the SOI wafer is bonded to the surface of the silicon substrate, and the substrate silicon layer and the buried oxide layer of the SOI wafer are removed; the top silicon layer is etched, and the first SiO 2 A silicon waveguide is formed on the waveguide layer; between the silicon waveguide and the first SiO 2 Fabrication of the second SiO on the waveguide layer 2 Waveguide layer; etch the first SiO 2 waveguide layer and second SiO 2 waveguide layer to the bottom of the groove, forming SiO 2 waveguide. The present invention can solve SiO 2 The limited thickness of the waveguide can improve the coupling efficiency and is compatible with the CMOS process.

Description

technical field [0001] The invention belongs to the field of silicon photonics technology, in particular to the formation of SiO based on wafer bonding 2 A method for realizing mode speckle conversion by a waveguide and a mode speckle converter. Background technique [0002] The mode spot conversion technology of the end-coupled waveguide in the silicon photonics chip has always been the core technical difficulty of the commercialization of the silicon photonics chip. The diameter of the mode spot size of the silicon waveguide is around 0.5um, and the mode spot size of the single-mode fiber coupled with it is about 10um , the huge mode mismatch causes a large end-face coupling loss. [0003] In the prior art, the mode spot size of the silicon optical waveguide can be extended to about 3um through the Inverse Taper structure, but due to the substrate SiO 2 Due to the limitation of the thickness of the buried oxide layer (Box) and the upper cladding layer (Cladding), it is d...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies existing in the prior art, the present invention provides a method capable of solving SiO 2 Waveguide Thickness Constraints, Wafer Bonding Formation of SiO for Improving Coupling Efficiency 2 The Method of Waveguide Realizing Mode Spot Conversion

Images