Mems device and method of forming mems device
A technology of dielectric layer and backplane, applied in the field of micro-electromechanical, can solve the problems of poor tensile properties of backplane, sensitivity and accuracy of interference pull-in voltage test, etc.
Active Publication Date: 2021-05-25
SEMICON MFG ELECTRONICS (SHAOXING) CORP +1
View PDF8 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] In the existing process, the backplane is usually composed of low-stress nitride and a low-stress conductive layer covering it. However, for other considerations (such as in order to improve the signal-to-noise ratio of the chip), the MEMS backplane will be designed However, larger size backsheets made with low stress nitrides have poorer tensile properties that interfere with the sensitivity and accuracy of the pull-in voltage test
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030]The MEMS apparatus of the present invention and the method of forming the MEMS apparatus are further described below in conjunction with the accompanying drawings and specific examples. The advantages and features of the present invention will be more clear depending on the following description. It is to be noted that in the following description, many specific details and values are given to provide more thorough understanding of the present invention, however, those skilled in the art is that the present invention can no need one or more These details are implemented, in other examples, in order to avoid confusion with the present invention, it is not described for those skilled in the art. It should be understood that the accompanying drawings of the specification are in a very simplified form and are used in the use of a non-precision ratio, which is intended to be conveniently, and clearly assisted the object of the embodiment of the present invention.
[0031]In order to...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present invention relates to a MEMS device and a method of forming a MEMS device. In the MEMS device, the back plate includes a first dielectric layer, a second dielectric layer and a conductive layer stacked in sequence, wherein the stress level of the first dielectric layer is higher than that of the second dielectric layer, and the first dielectric layer The layer can improve the overall stress and rigidity of the backplane, help to improve the sensitivity and accuracy of the test when performing the pull-in voltage test, and help to achieve a larger backplane size while ensuring its tensile performance. In addition, since the conductive layer is still in contact with the second dielectric layer, the first dielectric layer has less influence on the contact performance of the conductive layer. In the MEMS device, a third dielectric layer may be provided on a side of the first dielectric layer away from the second dielectric layer to protect the first dielectric layer from being corroded. The method of forming a MEMS device can be used to form the MEMS device described above.
Description
Technical field[0001]The present invention relates to the field of microelectromechanical technology, and more particularly to a MEMS device and a method of forming a MEMS device.Background technique[0002]Micro Electro Mechanical System, MEMS) Set Micro Sensor, Micro-Pole, Micro - Mechanical Structure, Microcower (Micro Energy), Signal Processing and Control Circuit, High Performance Electronic Integrated Devices, Interface, Communication and Meeting Components, It can be seen as an independent intelligent system whose overall size is usually in a few millimeters or less. With the development trend of electronic devices, including MEMS electronic devices (hereinafter referred to as MEMS devices) such as MEMS microphones, MEMS accelerometers, MEMS gyroscopes, and have broad development prospects.[0003]MEMS manufacturing is different from traditional machining, MEMS can be made using micro-machined techniques with a CMOS compatible semiconductor process. Moreover, with the continuous ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H04R19/00H04R31/00
CPCH04R19/005H04R31/00H04R31/003
Inventor 傅思宇陆晓龙刘国安
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP