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A source bottle and semiconductor equipment

A source bottle and bottle cap technology, which is applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems that the solid powder source cannot be flattened, time is wasted, and the shape of the solid powder source surface cannot be determined and guaranteed. , to achieve the effect of solving the insufficient concentration of solid source steam, increasing the concentration of steam, and increasing the contact area

Active Publication Date: 2021-12-17
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] While the solid powder source is loaded in the solid source bottle, the plane of the solid powder source may not be flat, and the solid powder source may be tilted, bumped, etc. during transportation, resulting in the uncertainty and guarantee of the shape of the solid powder source surface in the bottle, which leads to Using the same process parameters does not necessarily produce films with the same quality. Every time the source bottle is replaced, the process parameters need to be measured again, which is a waste of time, a large workload, and a long recovery time.

Method used

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  • A source bottle and semiconductor equipment
  • A source bottle and semiconductor equipment
  • A source bottle and semiconductor equipment

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Embodiment 3

[0060] In another embodiment of the present invention, a guide hole is vertically provided in the bottle cap 2, and the air intake pipe 3 extends to the outside of the confined space through the guide hole; and the guide hole can limit the rotational freedom of the air intake pipe 3.

[0061] In the embodiment of the present invention, the degree of freedom of the intake pipe is limited by the guide hole to ensure the multi-directional rotation of the intake pipe in the confined space. Further, the tray fixed with the intake pipe can be rotated in multiple directions in the confined space, thereby facilitating Loading of solid state sources.

Embodiment 4

[0063] For the above-mentioned source bottle, the embodiment of the present invention also provides a semiconductor device, including a reaction chamber, a carrier gas pipeline, a source bottle and an air inlet pipeline, wherein the carrier gas pipeline is used to transport the carrier gas to the source bottle; For containing the solid-state source, the source bottle is the source bottle in the above embodiment; the gas inlet line is used to deliver the carrier gas and reaction gas in the source bottle to the reaction chamber.

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Abstract

The present invention provides a source bottle and semiconductor equipment. The source bottle includes: a bottle body and a bottle cap fixedly mounted on the bottle body, the bottle body and the bottle cap can form a closed space, and the bottle cap is also An air inlet pipe and an air outlet pipe communicating with the confined space are provided, the air inlet pipe is used for introducing carrier gas into the enclosed space, and the air outlet pipe is used for outputting the reaction precursor and the air outlet pipe to the outside of the enclosed space. The carrier gas also includes: a tray, arranged in the confined space, for loading the solid source; a cover, arranged opposite to the tray; a lifting device, used to drive the cover down to cover the tray on the a first position for the solid state source; or raised to a second position separate from the tray. The invention solves the problems of insufficient steam concentration of the solid source and spilling of the solid source during transportation and installation.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a source bottle and semiconductor equipment. Background technique [0002] At present, thin film deposition reaction systems and methods are widely used in devices in various fields, such as: semiconductors, integrated circuits, solar panels, flat-panel displays, microelectronics, light-emitting diodes, and the like. Forming a thin film with a thickness of 10 μm or less than 10 μm on the surface of a substrate by chemical vapor deposition (Chemical Vapor Deposition, hereinafter referred to as CVD) technology is a common method for thin film deposition. However, in the film deposition method using atomic layer deposition (Atomic Layer Deposition, hereinafter referred to as ALD) technology, a variety of reaction gases or vapors are required to enter the reaction chamber successively and continuously in an alternative manner, and before entering the chamber, they cannot i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/448
CPCC23C16/4481
Inventor 王勇飞兰云峰王帅伟
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD