Lateral inhibitory neuron circuit based on ferroelectric transistor FEFET
A technology of ferroelectric transistors and neurons, applied in biological neural network models, climate sustainability, energy-saving computing, etc., can solve problems such as large hardware overhead, high hardware overhead, unfavorable high density, large-scale integration, etc., to achieve The method is simple and the effect of reducing hardware overhead
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[0015] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.
[0016] Such as figure 1 As shown, the present embodiment is based on HfO Doped with Zr (HZO) The side inhibitory neuron circuit realized by the ferroelectric transistor FeFET includes capacitance C mem , reset tube M 1 , Positive feedback tube M 2 , Two-stage series inverter I 1 and I 2 ; Among them, the ferroelectric transistor FeFET is an N-type FeFET device, used to realize the side suppression function, and the drain terminal is connected to the input terminal V of the first-stage inverter mem Connected, the source is connected to GND, the gate is connected to the neuron N 1 Neuron N with the same structure 2 The input terminal of the first-stage inverter N 2 V mem ; Capacitance C mem It is used to simulate the cell membrane capacitance of biological neurons, accumulating the charge brought by the input post-synaptic current ...
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