Reflecting film and preparation method and application thereof
A technology of reflective film and radiation cooling, which is applied in the field of reflective film, can solve the problems of declining economic benefits, rising manufacturing costs, and film layer shedding, and achieves the effects of simple and efficient preparation methods, solving yellow edge oxidation, and reducing raw material costs
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[0040] see figure 1 , the present invention provides a reflective film 100 and a preparation method thereof. The preparation method is not only simple and efficient, but can reduce manufacturing costs, and the prepared reflective film 100 can effectively solve the problem of yellow edge oxidation on the edge of the reflective film 100 .
[0041] Specifically, the preparation method comprises the following steps:
[0042] (1) Provide a substrate 10 and a first target, and make the first target form a first layer 20 on the surface of the substrate 10 under vacuum and a first sputtering power;
[0043] (2) Provide a second target material, and make the second target material form the second layer 30 on the side of the first layer 20 away from the substrate 10 under vacuum and second sputtering power, wherein the The second target material includes a first section, a first middle section and a second section, the first middle section is arranged between the first section and the ...
Embodiment 1
[0086] In the chamber of the winding magnetron sputtering coating machine, the 80 μm PET film substrate is placed on the unwinding roller of the unwinding chamber, and is wound on the winding roller; at the same time, the first target, the second target The material and the third target are sequentially placed on the cathode target positions corresponding to the adjacent first chamber, the second chamber and the third chamber; the first target, the second target and the third target are placed on the The distance between the surface of the PET film substrate is adjusted to 10cm; close all chamber doors, turn on the backing pump and molecular pump in turn, and wait until the vacuum degree of the chamber reaches 5×10 -4 Pa, fill the process gas to the process vacuum, open the cathode and the driving roller to start the coating, and control the winding speed at 8m / min. During the magnetron sputtering deposition coating, the temperature in all chambers was kept constant at 15°C. ...
Embodiment 2
[0095] This embodiment is basically the same as Embodiment 1, the only difference is:
[0096] The substrate used is a 100 μm PEN film substrate; the distances from the first target, the second target and the third target to the surface of the PET film substrate are all adjusted to 8cm; the winding speed is controlled at 8m / min; During the sputter deposition of the coating, the temperature in all chambers was kept constant at 0°C, respectively.
[0097] The first sputtering power is 6kW, the first target material is AgPd alloy, and the mass fraction of Pd metal in the AgPd alloy is 1%, and the thickness of the first layer is 20nm.
[0098] The second sputtering power is 40kW, the material of the first segment in the second target is AgRn alloy, and the mass fraction of Rn metal in the AgRn alloy is 3%, and the length of the AgRn alloy accounts for 1 / 20 of the length of the second target, The material of the second section is AgCo alloy, and the mass fraction of Co metal in th...
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Abstract
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