Unlock instant, AI-driven research and patent intelligence for your innovation.

Capacitive coupling plasma etching equipment

A plasma and capacitive coupling technology, applied in circuits, discharge tubes, electrical components, etc., can solve problems such as radio frequency signal instability, and achieve the effect of avoiding instability and taking into account stability

Pending Publication Date: 2020-06-23
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the electrode is a part of the radio frequency circuit, when the lower electrode moves, it will cause the instability of the radio frequency signal. To realize the adjustable distance between the plates, it is necessary to take into account the stability of the radio frequency circuit at the same time.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitive coupling plasma etching equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0026] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0027] An upper electrode 102 and a base 10 opposite to the upper electrode 102 are arranged in the cavity 100, the base 10 includes a lower electrode 105, the lower electrode 105 is fixed on a conductive support rod 110, and the lower end of the conductive support rod 110 is fixed on On the retractable conduct...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides capacitive coupling plasma etching equipment, which is characterized in that a lower electrode is fixed at the lower end of a conductive supporting rod; a telescopic conductivepart is fixed at the lower end of the conductive supporting rod; the telescopic conductive part stretches out and draws back in the axial direction of the conductive supporting rod; and meanwhile, thelower end of the telescopic conductive part is electrically connected with the output end of a radio frequency matcher through an electric connecting part, so that the height of the lower electrode can be controlled through stretching out and drawing back of the telescopic conductive part, and the distance between an upper pole plate and a lower pole plate is adjustable. Meanwhile, the equipmentis further provided with an inner conducting ring at the outer side of the lower electrode, wherein the inner conducting ring is electrically connected with a cavity through the telescopic conductivepart, shielding is formed between a lower electrode of the inner conducting ring and a radio frequency return path in the cavity, and the instability of a radio frequency loop caused by a radio frequency field of the lower electrode in the moving process is avoided, so that the stability of the radio frequency loop is considered while the distance between the pole plates is adjustable.

Description

technical field [0001] The invention relates to the field of semiconductor processing equipment, in particular to a capacitive coupling plasma etching equipment. Background technique [0002] Capacitively coupled plasma processing equipment generates plasma by means of radio frequency coupling discharge, and then uses plasma for deposition, etching and other processing techniques. Among them, the distance between the electrodes that generate plasma is an important parameter, especially In plasma etching equipment, with the continuous improvement of processing technology requirements, different etching steps need to be completed under different electrode plate spacings. However, since the electrode is a part of the radio frequency circuit, when the lower electrode moves, it will cause the instability of the radio frequency signal. To realize the adjustable distance between the plates, it is necessary to take into account the stability of the radio frequency circuit at the sam...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01J37/02H01J37/305H01J37/32
CPCH01J37/3053H01J37/32091H01J37/32568H01J37/026H01J37/32532H01L21/6831H01L21/67248H01L21/68792H01L21/68742H01J37/32183H01J37/32642H01J37/32651H01J37/32715H01L21/3065H01L21/6833H01L21/67069
Inventor 黄允文倪图强梁洁赵金龙吴磊
Owner ADVANCED MICRO FAB EQUIP INC CHINA