Monitoring structure and monitoring method for width of large-size opening of silicon wet etching tank

Abstract

The invention discloses a monitoring structure and a monitoring method for the width of a large-size opening of a silicon wet etching tank. The device comprises a monocrystalline silicon inch bottom and a plurality of wet etching grooves, wherein the plurality of wet etching grooves are formed in the monocrystalline silicon inch bottom, the top surfaces of the wet etching grooves are rectangular,the dislocation distances between the wet etching grooves are set to be 1 [mu]m, 2 [mu]m, 3 [mu]m,..., (n-1) [mu]m, and the dislocation spacing is the corrosion deviation of the opening width of the wet etching grooves to be monitored. According to the invention, the characteristics of anisotropic wet etching of silicon are ingeniously utilized, a corresponding monitoring graph can be designed according to the requirement for the opening width of the product etching groove, a monitoring structure is formed while the product etching groove is formed, and therefore the opening width of the product etching groove can be visually, conveniently and rapidly monitored by monitoring the monitoring structure. A common microscope can be used for monitoring a monitoring structure, the operation is convenient, the cost is low, and the high monitoring precision can be achieved.

Description

technical field [0001] The invention relates to the technical field of silicon wet etching monitoring, in particular to a monitoring structure and a monitoring method for a large opening width of a silicon wet etching groove. Background technique [0002] The silicon optical communication industry often uses V-grooves with large openings to position devices, and the positioning accuracy is required to be at the um level. The V-groove structure is wet-etched. Among wet etching processes, the use of an anisotropic wet etching process for silicon has become very common. In the anisotropic wet etching process of silicon, different crystal orientations of silicon have different etching rates, that is, the etching rate is closely related to the crystal orientation of single crystal silicon, 100 face down etching is used to confirm the depth of the etching groove, 111 The lateral etching of the face is used to confirm the opening size of the etching groove. In addition, the anis...

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Problems solved by technology

[0004] The purpose of the present invention is to solve the above problems, and design a monitoring structure and monitoring method for the large-scale opening width of silicon wet etching tank, which solves the problem that the existing large-scale measurement error will be large and cannot be accurately measured

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