Thermal induction cracking method for crystalline silicon cell

Abstract

The invention discloses a thermal induction cracking method for a crystalline silicon cell. The method comprises the following steps: manufacturing a silicon wafer with a stress induction groove; manufacturing the silicon wafer with the stress induction groove into a battery piece; and carrying out thermal induction on the battery piece, and carrying out splitting along the direction of the stressinduction groove of the battery piece to realize piece cracking. According to the crystal silicon battery thermal induction splitting method provided by the invention, the stress induction groove isprepared before the procedures of preparing the battery passivation film, the tunneling film and the transparent conductive film, so that the attenuation influence of the stress induction groove on the battery power can be eliminated, the grooving efficiency is improved, the thermal induction process flow is simplified, and the thermal induction splitting productivity is improved.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic cells, and in particular relates to a method for thermally induced splitting of crystalline silicon cells. Background technique [0002] With the depletion of fossil energy and the seriousness of environmental pollution, cleaner and cheaper alternative energy has attracted more and more attention. As a low-carbon renewable clean energy, solar energy has developed rapidly in recent years. With the advent of the era of grid parity, the cost reduction and efficiency increase of photovoltaic modules has become the focus of research in the solar energy industry. Larger and thinner cells are an inevitable trend of cost reduction recognized in the industry. As the cell size becomes larger and thinner, it has become an inevitable trend to perform secondary cutting of crystalline silicon cells, split processing and then prepare photovoltaic modules. [0003] High-efficiency crystalline silicon cells...

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Problems solved by technology

[0003] High-efficiency crystalline silicon cells such as HIT, HJT, and Topcon have begun to accelerate their industrialization. These high-efficiency crystalline silicon cells include various passivation, tunneling films, conductive oxide films, and other high-temperature-sensitive film structures. Traditional laser grooving The mechanical splitting process will cause a significant reduction in the power of the above-mentioned high-efficiency crystalline silicon cells

The power attenuation of two-piece cells is about 1%-2%. As the number of pieces increases, the power attenuation increases. For crystalline silicon cells with a size ≥ 210mm, the current industry will achieve 3 pieces or more. Therefore, how to reduce the impact of cutting slivers on high efficiency The loss caused by the power of the cell has become an urgent problem to be solved

[0005] However, the above-mentioned heat-induced splitting method in the prior art requires laser to prepare stress-inducing grooves on the finished cell, the groove depth is 35%-70% of the total thickness of the cell, and the length is 2-10mm. Containing passivation, tunneling film, conductive oxide film and other film structures sensitive to high temperature, this process will still reduce the power of high-efficiency cells, and the more the number of slices, the greater the impact, while pre-grooving The addition of steps makes the equipment complex and the process flow increases, which limits the increase in production capacity

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