LED chip and preparation method thereof
A technology of LED chips and epitaxy, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low current density and low light output efficiency of LED chips, so as to improve the extraction rate of light, improve the external quantum efficiency, and increase the light output area Effect
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[0047] In order to make the content of the present invention clearer, the content of the present invention will be further described below in conjunction with the accompanying drawings. The invention is not limited to this specific example. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0048] Such as figure 1 As shown, an LED chip includes:
[0049] substrate1;
[0050] The epitaxial stack 2 disposed on the surface of the substrate 1, the epitaxial stack 2 includes an N-type semiconductor layer 2-1, an active region 2-2, and a P-type semiconductor layer 2-3 stacked in sequence along the first direction, and the epitaxial stack The local area of layer 2 is etched to part of the N-type semiconductor layer 2-1, so that the epitaxial stack 2 forms an N electrode fabrication area 3 and a first mesa 4; the surface...
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