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LED chip and preparation method thereof

A technology of LED chips and epitaxy, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low current density and low light output efficiency of LED chips, so as to improve the extraction rate of light, improve the external quantum efficiency, and increase the light output area Effect

Pending Publication Date: 2020-07-03
XIAMEN QIANZHAO SEMICON TECH CO LTD
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Problems solved by technology

[0005] The purpose of the present invention is to provide an LED chip and its preparation method to solve the problem in the prior art that the light-emitting efficiency of the LED chip is low due to the relatively low current density of the light-emitting area at the edge of the LED chip.

Method used

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  • LED chip and preparation method thereof
  • LED chip and preparation method thereof
  • LED chip and preparation method thereof

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Embodiment Construction

[0047] In order to make the content of the present invention clearer, the content of the present invention will be further described below in conjunction with the accompanying drawings. The invention is not limited to this specific example. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0048] Such as figure 1 As shown, an LED chip includes:

[0049] substrate1;

[0050] The epitaxial stack 2 disposed on the surface of the substrate 1, the epitaxial stack 2 includes an N-type semiconductor layer 2-1, an active region 2-2, and a P-type semiconductor layer 2-3 stacked in sequence along the first direction, and the epitaxial stack The local area of ​​layer 2 is etched to part of the N-type semiconductor layer 2-1, so that the epitaxial stack 2 forms an N electrode fabrication area 3 and a first mesa 4; the surface...

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Abstract

The invention provides an LED chip and a preparation method thereof, and the method comprises the steps: a part of an N-type semiconductor layer is etched in a local region of an epitaxial laminationlayer, and the epitaxial lamination layer is enabled to form an N electrode manufacturing region and a first tabletop; the surface of the first tabletop is provided with a P electrode manufacturing region, the edge of the first tabletop is provided with a plurality of holes, and each hole extends from the P-type semiconductor layer to a part of the N-type semiconductor layer through the active region; each hole is filled with a light-transmitting insulating material, and each hole fills the same horizontal surface as the active region; under the condition that the driving current of the LED chip is fixed, the current density is effectively improved, and the effect of enhancing the quantum efficiency in the LED chip is achieved; meanwhile, light can be emitted through the side walls of theholes, the light emitting area is increased, and the external quantum efficiency of the LED chip is further improved; therefore, the light extraction rate of the LED chip is effectively improved.

Description

technical field [0001] The invention relates to the field of light emitting diodes, in particular to an LED chip and a preparation method thereof. Background technique [0002] With the rapid development of LED technology and the gradual improvement of LED light efficiency, the application of LED is becoming more and more extensive, and people are paying more and more attention to the development prospect of LED in the lighting market. LED chip, as the core component of LED lamp, its function is to convert electrical energy into light energy, specifically, it includes epitaxial wafers and N-type electrodes and P-type electrodes respectively arranged on the epitaxial wafers. The epitaxial wafer includes a P-type semiconductor layer, an N-type semiconductor layer, and an active layer between the N-type semiconductor layer and the P-type semiconductor layer. When a current passes through the LED chip, the holes in the P-type semiconductor and The electrons in the N-type semico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/08H01L33/14H01L33/44H01L33/00
CPCH01L33/14H01L33/145H01L33/44H01L33/08H01L33/005
Inventor 李镇勇魏振东陈帅城刘岩林锋杰
Owner XIAMEN QIANZHAO SEMICON TECH CO LTD
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