MOS device leakage current transient sampling device and method
A MOS device and leakage current sampling technology, which is applied in the field of MOS transistors, can solve problems such as high cost, low utilization rate, and long test time, and achieve the effects of improving electrical performance, ensuring leakage current resolution, and low cost of test circuits
Pending Publication Date: 2020-07-10
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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Problems solved by technology
[0003] The traditional test of MOS leakage current is to use an instrument test device, but it has defects such as long test time, low utilization rate, and high cost.
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[0030] The present invention will be more fully understood from the following detailed description, which should be read in conjunction with the accompanying drawings. Detailed embodiments of the present invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely exemplary of the invention, which may be embodied in various forms. Therefore, specific functional details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a teaching to one skilled in the art that, in fact, any suitably detailed embodiment may differ in any suitably detailed embodiment. The manner employs the representative basis of the present invention.
[0031] A MOS device leakage current transient sampling device disclosed in the present invention obtains the MOS device transient leakage current value Id through sampling and calculation, such as figure 1 As shown, it includes a MOS device under test 1 , a MOS gate t...
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The invention discloses an MOS device leakage current transient sampling device and method. The device comprises an MOS drain current test circuit and an MOS drain current calculation circuit, the MOSdrain current test circuit is connected with a drain of a tested MOS device, an input end receives an externally input drain voltage Vd, and a drain current signal Vo obtained by sampling is output according to the drain voltage Vd; the MOS drain current calculation circuit is in bidirectional connection with the output end of the MOS drain current test circuit; and a leakage current sampling order of magnitude of the MOS drain current test circuit is controlled according to the received drain current signal Vo and a leakage current level of the tested MOS device, and a transient leakage current value Id of the tested MOS device is calculated according to the received drain current signal Vo. In the invention, while a leakage current resolution is ensured, a plurality of nanoampere-to-microampere leakage current MOS devices can be tested, and cost of the test circuit is low.
Description
technical field [0001] The invention belongs to the technical field of MOS transistors, and in particular relates to a transient sampling device and method for leakage current of a MOS device. Background technique [0002] MOS (Metal-Oxide-Semiconductor, Metal-Oxide-Semiconductor) transistors are widely used in semiconductor chips and are the core cornerstone of chips. The leakage current parameters of the MOS transistor will affect the static power consumption and noise of the chip, and produce structural defects. Crystal structure defects are key parameters that affect the electrical characteristics and working performance of semiconductor materials and devices. Transistors are very sensitive to changes in external conditions, such as pressure, load, and irradiation, which will significantly change the number and distribution of structural defects, and the number of structural defects and distribution have an important impact on the properties of the material. [0003] T...
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IPC IPC(8): G01R31/52G01R31/26
CPCG01R31/2621
Inventor 乔海张驰戴明志李荣张杰陈思鲁杨桂林
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI