Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps: forming a base comprising a substrate and a fin protruding from the substrate, wherein the substrate comprises a peripheral region for forming an input / output device and a core region for forming a core device; forming a gate structure stretching across the fin, wherein the gatestructure covers part of the top and part of the side wall of the fin; performing first ion doping processing on a part of the fin covered by the gate structure in the peripheral region to form an amorphous region; after the non-crystallization region is formed, carrying out second ion doping processing on the fin, far away from one side of the gate structure, of the non-crystallization region, and carrying out first annealing processing on the peripheral region to form a first lightly doped region; after the first lightly doped region is formed, forming a source-drain doped layer in the finson the two sides of the gate structure. According to the embodiment of the invention, the GIDL problem and the inter-band tunneling effect of the input / output device can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the gradual development of semiconductor process technology, the development trend of semiconductor process nodes following Moore's Law continues to decrease. In order to adapt to the reduction of process nodes, the channel length of MOSFET field effect transistors is also continuously shortened accordingly. However, with the shortening of the channel length of the device, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the difficulty of pinching off the channel by the gate voltage also decreases. The larger and larger the subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) is more likely to occur. [0003] Therefore, in ord...

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Problems solved by technology

However, as the channel length of the device shortens, the distance between the source and the drain of the device also shortens, so the control ability of the gate to the channel becomes worse, and the difficulty of pinching off the channel by the gate voltage also increases. It is getting bigger and bigger, making subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur

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