A programmable high-precision dynamic driving gan circuit and its application

Abstract

The invention belongs to the field of power semiconductor device switches, and specifically relates to a programmable high-precision dynamic driving GaN circuit and its application. The circuit includes a programmable digital module, a clock generation module and a driving module; the programmable digital module includes an EEPROM readout circuit, Register circuit, logic control circuit; drive circuit includes rough drive circuit and fine drive circuit. The turn-on and turn-off times are equally divided into multiple time periods, and each time period is a rough driving cycle; fine-tuning of the fine driving can be performed once in each rough driving cycle to generate pulses to control the driving current of the fine driving circuit. After power-on, the off-chip data is stored in the register through the EEPROM readout circuit, and the oscillator circuit controls the logic circuit to transmit the required data to the drive circuit during the turn-on and turn-off process, and dynamically controls the rough drive circuit and the rough drive circuit of multiple rough drive cycles. Fine drive circuit to realize programmable high-precision active GaN gate control.

Description

technical field [0001] The invention belongs to the field of power semiconductor device switches, and more specifically relates to a programmable high-precision dynamic driving GaN circuit and its application. Background technique [0002] Power electronic devices are widely used in people's daily life, among which power semiconductor devices play a vital role in power electronics. In power semiconductor devices, the performance of MOSFET devices is basically mature and stable. As a new device that is different from MOSFET in material and structure, GaN has smaller device size, lower on-resistance, and smaller The input capacitance; so that GaN has a faster switching speed and lower static loss. [0003] The faster switching speed of GaN brings challenges to its driving. Faster switching speed will lead to more severe ringing phenomenon and larger overshoot, which will not only damage the device, but also may lead to parasitic conduction, resulting in shoot-through Burn ou...

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a programmable high-precision dynamic driving GaN circuit and its application to solve the technical problem that the existing dynamic driving GaN circuit has a driving delay and cannot obtain a preset driving waveform when driving GaN

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